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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 22/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9.5A 8SO |
In Stock4,274 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9.5A |
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V |
Power - Max: 1.28W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 4.5A 8SOP |
In Stock7,175 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 8SOIC |
In Stock3,226 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A |
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V |
Power - Max: 1.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/4.5A SOP8 |
In Stock3,290 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V POWERPAK SO8 |
In Stock15,716 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V |
Power - Max: 22W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 30V 7.1A 8SOP |
In Stock4,002 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 100V 2A/1.5A TSMT8 |
In Stock4,347 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A |
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V |
Power - Max: 1.5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: TSMT8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 25V 8-POWERPAIR |
In Stock3,842 More on Order |
|
Series: TrenchFET® Gen IV |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V |
Power - Max: 20.2W, 40W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-PowerPair® (6x5) |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 24V 8A WMINI8-F1 |
In Stock4,293 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1W |
Operating Temperature: -40°C ~ 85°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: WMini8-F1 |
|
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|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS 2N-CH 100V BUMPED DIE |
In Stock10,484 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.7A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS 2N-CH 120V BUMPED DIE |
In Stock15,478 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Dual) Common Source |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 120V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GANFET 2 N-CH 30V 9.5A/38A DIE |
In Stock4,487 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GANFET 2 N-CHANNEL 60V 23A DIE |
In Stock8,983 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tj) |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock5,961 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A |
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 60V 7A 15-SIP |
In Stock1,535 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 500V 1.5A 12-SIP |
In Stock436 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 600V 7A 15-SIP |
In Stock402 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
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|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.36A SOT363 |
In Stock39,797 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 360mA |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V |
Power - Max: 310mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS |
In Stock12,228 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V |
Power - Max: 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS |
In Stock4,766 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V |
Power - Max: 200mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N-CHAN 41V 60V SOT363 |
In Stock7,261 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta) |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 200mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS |
In Stock8,062 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.7V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V |
Power - Max: 200mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.295A SC88 |
In Stock14,664 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 295mA |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA ES6 |
In Stock5,112 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V |
Power - Max: 250mW |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS |
In Stock13,553 More on Order |
|
Series: U-MOSVII |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V |
Power - Max: 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Arrays N-CHANNEL MOSFET EFFECT,SOT-363 |
In Stock38,223 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 340mA |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
Power - Max: 150mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.1A US6 |
In Stock3,731 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V |
Power - Max: 200mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays X34 SMALL LOW RON DUAL NCH MOSFE |
In Stock4,901 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V |
Power - Max: 200mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Arrays N AND P-CHANNEL MOSFETSOT-363 |
In Stock45,953 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA |
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 120pF, 113pF @ 16V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Arrays N/P-CHANNELMOSFETSOT-563 |
In Stock49,850 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA |
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 120pF, 170pF @ 16V |
Power - Max: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |