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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 48/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock225 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock365 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V |
Vgs(th) (Max) @ Id: 3.45V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP |
In Stock305 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 14Ohm |
Vgs(th) (Max) @ Id: 10mV @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock282 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 10mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP |
In Stock305 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 25Ohm |
Vgs(th) (Max) @ Id: 10mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock263 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8SOIC |
In Stock394 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 200V 26A/17A I4PAC |
In Stock353 More on Order |
|
Series: Polar™ |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 26A, 17A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V |
Power - Max: 125W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CHA 12V 2A DFN1310 |
In Stock308 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 2A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V |
Power - Max: 390mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: X2-DFN1310-6 (Type B) |
|
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7.5A UDFN2030-6 |
In Stock150 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.5A |
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UFDFN Exposed Pad |
Supplier Device Package: U-DFN2030-6 (Type B) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 35V TO252-4L |
In Stock496 More on Order |
|
Series: - |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V |
Power - Max: 1.54W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: TO-252-4L |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 11A U-DFN2535-6 |
In Stock366 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 7mOhm @ 5.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2535-6 |
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|
Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT563 |
In Stock308 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 350mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
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|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 9.8A LFPAK56 |
In Stock211 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 9.8A |
Rds On (Max) @ Id, Vgs: 121mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V |
Power - Max: 32W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-1205, 8-LFPAK56 |
Supplier Device Package: LFPAK56D |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock343 More on Order |
|
Series: STripFET™ II |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V |
Power - Max: 1.6W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.2A 8-SOIC |
In Stock285 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.2A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V |
Power - Max: 1.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 13A/18A 8-PQFN |
In Stock410 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A, 18A |
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: Power56 |
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EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock135 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock373 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 810mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8DIP |
In Stock459 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH + P-CH |
In Stock396 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta) |
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.23nC, 1.2nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds: 46pF, 43pF @ 10V |
Power - Max: 500mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: UF6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
In Stock309 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
In Stock422 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- |
In Stock273 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- |
In Stock216 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays X34 PB-F UF6 S-MOS (LF) TRANSIST |
In Stock438 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) |
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.1nC, 2.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 180pF, 120pF @ 15V |
Power - Max: 500mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: UF6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- |
In Stock108 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- |
In Stock362 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays 4V DRIVE NCH+NCH MOSFET. A POWER |
In Stock192 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) |
Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V |
Power - Max: 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays SH8MA2 IS A POWER MOSFET WITH LO |
In Stock245 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3nC, 6.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 125pF, 305pF @ 15V |
Power - Max: 1.4W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |