Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 330MA SOT363 |
In Stock448 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 330mA (Tc) |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V |
Power - Max: 860mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A |
In Stock239 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V |
Power - Max: 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT363 |
In Stock246 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT363 |
In Stock122 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 230mA |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 0.24A SOT363 |
In Stock275 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 240mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V |
Power - Max: 300mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 |
In Stock399 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 |
In Stock155 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.2A SOT666 |
In Stock393 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V |
Power - Max: 260mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH SC-88-6 |
In Stock213 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.32A 6TSSOP |
In Stock484 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 280mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.65A SOT363 |
In Stock394 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 650mA |
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V |
Power - Max: 290mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT363 |
In Stock237 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 180MA SOT363 |
In Stock397 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A ES6 |
In Stock438 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.25A 2-2N1D |
In Stock322 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT363 |
In Stock229 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT323 |
In Stock213 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT363 |
In Stock311 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock392 More on Order |
|
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT363 |
In Stock120 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 230mA |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 |
In Stock131 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 |
In Stock361 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock332 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V SOT963 |
In Stock276 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) |
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V |
Power - Max: 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-963 |
Supplier Device Package: SOT-963 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V SOT963 |
In Stock230 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) |
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V |
Power - Max: 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-963 |
Supplier Device Package: SOT-963 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock432 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) |
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V |
Power - Max: 740mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V X2-DFN0806 |
In Stock458 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock222 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock396 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.5A ES6 |
In Stock136 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA |
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |