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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 76/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 372A SP6 |
In Stock116 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 372A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 163A SP6 |
In Stock409 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 163A |
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V |
Power - Max: 1136W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 278A SP6 |
In Stock430 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 278A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 90A SP6 |
In Stock280 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 150A SP6 |
In Stock400 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 150A |
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 65A SP6 |
In Stock415 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 65A |
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 45A SP3 |
In Stock390 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 45A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
Power - Max: 568W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 85A Y3-LI |
In Stock426 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 85A |
Rds On (Max) @ Id, Vgs: 76mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Y3-Li |
Supplier Device Package: Y3-Li |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 495A SP6 |
In Stock224 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 495A |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 60A SP6 |
In Stock388 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 60A |
Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 208A SP6 |
In Stock441 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 208A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 600V 95A SP6-P |
In Stock473 More on Order |
|
Series: CoolMOS™ |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 150A SP6 |
In Stock262 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 150A |
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 180A SP6 |
In Stock247 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 180A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 300V 290A Y3-DCB |
In Stock323 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 290A |
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 145A, 10V |
Vgs(th) (Max) @ Id: 4V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
Power - Max: 1500W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Y3-DCB |
Supplier Device Package: Y3-DCB |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 99A SP6 |
In Stock215 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 99A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 78A SP6 |
In Stock387 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 78A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 60A SP6 |
In Stock296 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 60A |
Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 43A SP6 |
In Stock149 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 43A |
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 34A SP6 |
In Stock167 More on Order |
|
Series: POWER MOS 7® |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 34A |
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC |
In Stock358 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual), Schottky |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 148A (Tc) |
Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V |
Vgs(th) (Max) @ Id: 3V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V |
Power - Max: 937W |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 680A Y3-LI |
In Stock266 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 680A |
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 500A, 10V |
Vgs(th) (Max) @ Id: 4V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Y3-Li |
Supplier Device Package: Y3-Li |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 600V 116A SP6-P |
In Stock279 More on Order |
|
Series: CoolMOS™ |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 116A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 88A, 10V |
Vgs(th) (Max) @ Id: 3.6V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V |
Power - Max: 625W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: SP6-P |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 143A SP1 |
In Stock374 More on Order |
|
Series: - |
FET Type: 2 N Channel (Phase Leg) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 143A (Tc) |
Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V |
Power - Max: 600W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC |
In Stock120 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual), Schottky |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 337A (Tc) |
Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V |
Vgs(th) (Max) @ Id: 3V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V |
Power - Max: 2140W |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1700V 53A SP1 |
In Stock298 More on Order |
|
Series: - |
FET Type: 2 N Channel (Phase Leg) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V |
Power - Max: 350W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC |
In Stock381 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 112A (Tc) |
Rds On (Max) @ Id, Vgs: 33mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id: 3V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V |
Power - Max: 714W |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
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|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 1200V 337A MODULE |
In Stock176 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 337A (Tc) |
Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V |
Vgs(th) (Max) @ Id: 3V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V |
Power - Max: - |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
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|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC MOSFET |
In Stock499 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 74A (Tc) |
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id: 4V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V |
Power - Max: 375W |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 220A SP3F |
In Stock221 More on Order |
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Series: - |
FET Type: 2 N Channel (Phase Leg) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V |
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V |
Power - Max: 925W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |