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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 79/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-MSOP |
In Stock229 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V |
Power - Max: 1.04W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: 8-MSOP |
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|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.5A 8-MSOP |
In Stock438 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V |
Power - Max: 1.04W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: 8-MSOP |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT-363 |
In Stock168 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 230mA |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 310mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A 8-SOIC |
In Stock388 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.6A 8-SOIC |
In Stock201 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.6A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8-SOIC |
In Stock229 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 9A 8-SOIC |
In Stock474 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 55V 3.4A 8-SOIC |
In Stock240 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock353 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock182 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock166 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8-SOIC |
In Stock213 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 8-SOIC |
In Stock140 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.4A MICRO8 |
In Stock457 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.4A |
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2.4A MICRO8 |
In Stock380 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.4A |
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.7A MICRO8 |
In Stock319 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.7A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 1.7A MICRO8 |
In Stock290 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.7A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V MICRO8 |
In Stock223 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A |
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
In Stock434 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A |
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A MICRO8 |
In Stock314 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.4A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A MICRO8 |
In Stock394 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock381 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock109 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC |
In Stock456 More on Order |
|
Series: FETKY™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC |
In Stock483 More on Order |
|
Series: FETKY™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock423 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8-SOIC |
In Stock333 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 8-SOIC |
In Stock185 More on Order |
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Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 20V 1.5A DMOS 24-DW |
In Stock389 More on Order |
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Series: - |
FET Type: - |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 14V |
Power - Max: 2.86W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 24-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: 24-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 8-SOIC |
In Stock271 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 2W |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |