Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5.3A 8-SOIC |
In Stock114 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.3A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8-SOIC |
In Stock352 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8-SOIC |
In Stock257 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8SOIC |
In Stock397 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 7.8A 8-SOIC |
In Stock152 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 7.8A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8A 8-SOIC |
In Stock104 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 9.2A 8-SOIC |
In Stock468 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 9.2A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A 8-SOIC |
In Stock171 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 4.7A 8-SOIC |
In Stock419 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 55V 3.4A 8-SOIC |
In Stock197 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V 8-SOIC |
In Stock492 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock284 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock220 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC |
In Stock199 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A/12A 8-SOIC |
In Stock204 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A, 12A |
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock431 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8-SOIC |
In Stock463 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 8-SOIC |
In Stock232 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6A 8-SOP |
In Stock205 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V |
Vgs(th) (Max) @ Id: 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V |
Power - Max: 450mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: 8-SOP (5.5x6.0) |
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|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3A VS-8 |
In Stock114 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V |
Power - Max: 330mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: VS-8 (2.9x1.5) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.3A 8-SOIC |
In Stock299 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.3A |
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 3.6A 8-SOIC |
In Stock448 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8SOIC |
In Stock292 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A |
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 16V 2.3A 8SOIC |
In Stock190 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 16V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V |
Power - Max: 710mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.7A 8TSSOP |
In Stock422 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V |
Power - Max: 940mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.2A 8TSSOP |
In Stock150 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V |
Power - Max: 1.39W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.45A 8MICRO |
In Stock184 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.45A |
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.45A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 11.6A 8TSSOP |
In Stock168 More on Order |
|
Series: TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 11.6A |
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V |
Power - Max: 4.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9.9A 8TSSOP |
In Stock439 More on Order |
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Series: TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9.9A |
Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.6A 8TSSOP |
In Stock232 More on Order |
|
Series: TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.6A |
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V |
Power - Max: 2.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |