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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 83/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6A/7A 8SOIC |
In Stock140 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A, 7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/3.5A 8SOIC |
In Stock485 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/7A 8SOIC |
In Stock352 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 7A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6A/4.5A 8SOIC |
In Stock420 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 9A/5A 8SOIC |
In Stock349 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A, 5A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 1.5A TUMT5 |
In Stock250 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: TUMT5 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.2A 8TSSOP |
In Stock394 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V |
Power - Max: 1.39W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6.3A/3A 8-SOIC |
In Stock271 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A |
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A MICRO8 |
In Stock263 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.4A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V |
Power - Max: 1.3W |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
|
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 100V 8SOIC |
In Stock145 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A |
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 3.6A 8-SOIC |
In Stock120 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 9A 8-SOIC |
In Stock134 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 10A 8-SOIC |
In Stock332 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7.3A 6SSOT |
In Stock427 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.3A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V |
Power - Max: 1.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: SuperSOT™-6 FLMP |
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|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6SSOT |
In Stock289 More on Order |
|
Series: PowerTrench® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A |
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V |
Power - Max: 1.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: SuperSOT™-6 FLMP |
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|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5A 6SSOT |
In Stock316 More on Order |
|
Series: PowerTrench® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: SuperSOT™-6 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC |
In Stock146 More on Order |
|
Series: FETKY™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 7.8A 8-SOIC |
In Stock131 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 7.8A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.5A 8-SOIC |
In Stock415 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8-SOIC |
In Stock100 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.3A 8-SOIC |
In Stock366 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V 8-SOIC |
In Stock228 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.2A 8-SOIC |
In Stock432 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 8-SOIC |
In Stock402 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A 8-SOIC |
In Stock412 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 3.6A 8-SOIC |
In Stock417 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8-SOIC |
In Stock495 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC |
In Stock264 More on Order |
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Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A, 3A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.6A 8-SOIC |
In Stock356 More on Order |
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Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.6A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC |
In Stock182 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.5A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |