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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 149/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 54A D2PAK |
In Stock5,366 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 118W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TO-263-3 |
In Stock15,065 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 56W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D²PAK (TO-263AB) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 650V 9.7A DPAK |
In Stock3,907 More on Order |
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Series: DTMOSV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 360µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 60A PPAK SO-8L |
In Stock3,859 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V |
Vgs (Max): +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 48W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 22A 8-SOP ADV |
In Stock8,024 More on Order |
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Series: U-MOSVIII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta), 45W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP Advance (5x5) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8THINPAK |
In Stock7,450 More on Order |
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Series: CoolMOS™ P6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 56.8W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-ThinPak (5x6) |
Package / Case: 8-PowerTDFN |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO252 |
In Stock3,552 More on Order |
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Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 89W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single 30V N-CHANNEL NEXFET POWER MOSFE |
In Stock2,182 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 1.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (5x6) |
Package / Case: 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 185A 8PDFN |
In Stock4,072 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 185A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3479pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A D2PAK |
In Stock5,681 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 114W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 37A POWERPAKSO |
In Stock4,015 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 44.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 37A D2PAK |
In Stock7,035 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1624pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 103W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.3A IPAK |
In Stock7,825 More on Order |
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Series: SuperMESH™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.8A IPAK |
In Stock4,587 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 57W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251-3 |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CHA 60V 13.5A SO8 |
In Stock3,996 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A SOT428 |
In Stock3,175 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 20W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: CPT3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET NCH 700V 4A TO251 |
In Stock2,466 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): 42W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO251-3 |
Package / Case: TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 170A 8PDFN |
In Stock3,662 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4224pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V TO252AA |
In Stock2,733 More on Order |
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Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252AA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 46A D2PAK |
In Stock9,430 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 157W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 67A D2PAK |
In Stock5,649 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 4034pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 157W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 20.2A 1212-8S |
In Stock3,851 More on Order |
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Series: ThunderFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 75V |
FET Feature: - |
Power Dissipation (Max): 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) |
Package / Case: PowerPAK® 1212-8S |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK |
In Stock4,770 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 157W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 16.5A POWERDI |
In Stock4,084 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2597pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI5060-8 |
Package / Case: 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 141A 8PDFN |
In Stock4,450 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 141A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12.6A 8DSO |
In Stock3,567 More on Order |
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Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.79W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28A D2PAK |
In Stock8,369 More on Order |
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Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 107W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1A IPAK |
In Stock3,127 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 28W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 16.5A POWER33 |
In Stock4,393 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 41W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 205A 8PDFN |
In Stock4,095 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 205A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4243pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |