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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 146/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 61.8A TO-3P(N) |
In Stock561 More on Order |
|
Series: DTMOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 30.9A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V |
FET Feature: Super Junction |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P(N) |
Package / Case: TO-3P-3, SC-65-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 44A PLUS247 |
In Stock567 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™-3 |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 240A TO264 |
In Stock578 More on Order |
|
Series: GigaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247-3 |
In Stock459 More on Order |
|
Series: Automotive, AEC-Q101, CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7440pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 36A TO-247 |
In Stock535 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 417W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 120A TO-264 |
In Stock411 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 58A TO-247-4 |
In Stock828 More on Order |
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Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-4L |
Package / Case: TO-247-4 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A TO-264 |
In Stock579 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 |
Package / Case: TO-264-3, TO-264AA |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 45A |
In Stock433 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 282W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK (7-Lead) |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 310A SOT227 |
In Stock1,482 More on Order |
|
Series: GigaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 310A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1070W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 77A SOT-227 |
In Stock532 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 77A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 568W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 62A PLUS264 |
In Stock644 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 550nC @ 20V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 800W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 29A ISOPLUS264 |
In Stock1,256 More on Order |
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Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS264™ |
Package / Case: ISOPLUS264™ |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V SOT883 |
In Stock35,344 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006B-3 |
Package / Case: 3-XFDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.5A WEMT6 |
In Stock13,277 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WEMT |
Package / Case: SOT-563, SOT-666 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3QFN |
In Stock14,647 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006B-3 |
Package / Case: 3-XFDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 6.5A SOT26 |
In Stock16,680 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-26 |
Package / Case: SOT-23-6 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8A DFN202 |
In Stock4,743 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020-6J |
Package / Case: 6-WDFN Exposed Pad |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 1.3A WEMT6 |
In Stock10,332 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WEMT |
Package / Case: SOT-563, SOT-666 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A TSST8 |
In Stock4,607 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSST |
Package / Case: 8-SMD, Flat Lead |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 9A 8SOP |
In Stock3,865 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 4.7A 8SOP |
In Stock3,455 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 5.3A 8SOP |
In Stock3,214 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 10A 8SOP |
In Stock3,142 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A 8PDFN |
In Stock3,706 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 54W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A 8PDFN |
In Stock4,498 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 843pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (5x6) |
Package / Case: 8-PowerTDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1A TSMT6 |
In Stock13,813 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 6-TDFN |
In Stock16,385 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 500mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 5.2pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 6.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TDFN (2x2) |
Package / Case: 6-VDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P CH 20V 6A 2-2AA1A |
In Stock4,214 More on Order |
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Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A SOT523 |
In Stock4,954 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V |
Vgs (Max): 10V |
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 250mW (Ta) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-523 |
Package / Case: SOT-523 |