FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 159/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SSM3K36TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS=20	In Stock7,749 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J36TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-2	In Stock8,430 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN55D0UTQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 160MA SOT-523	In Stock4,558 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 4Ohm @ 100mA, 4V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
SSM3J65CTC,L3F	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2	In Stock33,545 More on Order	Series: U-MOSVII	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V	Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: CST3C	Package / Case: SC-101, SOT-883
SSM3J64CTC,L3F	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-1	In Stock13,466 More on Order	Series: U-MOSVII	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V	Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: CST3C	Package / Case: SC-101, SOT-883
SSM3J375F,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2	In Stock7,688 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V	Vgs (Max): +6V, -8V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V	FET Feature: -	Power Dissipation (Max): 600mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: S-Mini	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3J377R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2	In Stock4,621 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V	Vgs (Max): +6V, -8V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: SOT-23F	Package / Case: SOT-23-3 Flat Leads
SI2102-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFETSOT-323	In Stock49,154 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.1A	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V	FET Feature: -	Power Dissipation (Max): 200mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
SI2318A-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-23 PACKAGE	In Stock38,015 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
SIL3407-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single P-CHANNEL,MOSFETS,SOT23-6L PACKA	In Stock43,400 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.1A	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V	FET Feature: -	Power Dissipation (Max): 350mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-6L	Package / Case: SOT-23-6
SI2101-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single P-CHANNELMOSFETSOT-323	In Stock38,285 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.4A	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 8V	FET Feature: -	Power Dissipation (Max): 290mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
SI2301A-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single P-CHANNEL,MOSFETS,SOT-23 PACKAGE	In Stock33,525 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.8A	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 6V	FET Feature: -	Power Dissipation (Max): 1.25W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
SI3404-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 5.8A SOT23	In Stock4,143 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V	FET Feature: -	Power Dissipation (Max): 350mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
BSH105,235	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.05A SOT23	In Stock12,422 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 570mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 16V	FET Feature: -	Power Dissipation (Max): 417mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3J374R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-3	In Stock4,935 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: SOT-23F	Package / Case: SOT-23-3 Flat Leads
CSD25480F3	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.7A PICOSTAR	In Stock24,243 More on Order	Series: FemtoFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V	Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V	Vgs (Max): -12V	Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
DMP32D4S-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 300MA SOT23	In Stock12,618 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 51.16pF @ 15V	FET Feature: -	Power Dissipation (Max): 370mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3J371R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2	In Stock9,818 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V	Vgs (Max): +6V, -8V	Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: SOT-23F	Package / Case: SOT-23-3 Flat Leads
SSM3J340R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3	In Stock9,036 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
RHU002N06FRAT106	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (AEC-Q101 QU	In Stock4,124 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: UMT3	Package / Case: SC-70, SOT-323
NVS4001NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.27A SC70	In Stock4,173 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V	FET Feature: -	Power Dissipation (Max): 330mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70-3 (SOT323)	Package / Case: SC-70, SOT-323
SSM3J352F,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH	In Stock4,869 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 1.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: S-Mini	Package / Case: TO-236-3, SC-59, SOT-23-3
DMP58D0LFB-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.18A DFN1006-3	In Stock12,262 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V	Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V	FET Feature: -	Power Dissipation (Max): 470mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-DFN1006 (1.0x0.6)	Package / Case: 3-UFDFN
SSM3J09FU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3	In Stock8,938 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTA4153NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 915MA SOT-416	In Stock12,497 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V	Vgs (Max): ±6V	Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V	FET Feature: -	Power Dissipation (Max): 300mW (Tj)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-75, SOT-416	Package / Case: SC-75, SOT-416
SIUD401ED-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V POWERPAK 0806	In Stock8,982 More on Order	Series: TrenchFET® Gen III	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 0806	Package / Case: PowerPAK® 0806
SIUD406ED-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 30-V POWERPAK 0806	In Stock8,338 More on Order	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 0806	Package / Case: PowerPAK® 0806
PMN120ENEX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3.1A 6TSOP	In Stock4,681 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 123mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SC-74, SOT-457
SSM3K347R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH	In Stock4,728 More on Order	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 38V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 86pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: SOT-23F	Package / Case: SOT-23-3 Flat Leads
SSM3J145TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2	In Stock4,141 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V	Vgs (Max): +6V, -8V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: UFM	Package / Case: 3-SMD, Flat Leads

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