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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 158/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET |
In Stock1,393 More on Order |
|
Series: MDmesh™ DM2 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 46A TO247AC |
In Stock684 More on Order |
|
Series: E |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5892pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 417W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO247AC |
In Stock736 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4854pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 379W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
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IXYS-RF |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 6A TO268 |
In Stock533 More on Order |
|
Series: HiPerRF™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 180W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-268 (IXFT) |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 42A TO247-4 |
In Stock1,386 More on Order |
|
Series: MDmesh™ M2 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-4L |
Package / Case: TO-247-4 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 76A TO247 |
In Stock680 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 |
In Stock1,589 More on Order |
|
Series: MDmesh™ II Plus |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 19.5A TO247 |
In Stock981 More on Order |
|
Series: SuperMESH5™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 64A TO247AD |
In Stock867 More on Order |
|
Series: E |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD |
Package / Case: TO-247-3 |
|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 64A TO247AC |
In Stock719 More on Order |
|
Series: E |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 25A |
In Stock1,433 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 170W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: - |
Package / Case: - |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A ISOTOP |
In Stock470 More on Order |
|
Series: PowerMESH™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 460W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: ISOTOP |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.2KV TO247-3 |
In Stock1,116 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 318W (Tc) |
Operating Temperature: -55°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: HiP247™ |
Package / Case: TO-247-3 |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 1700V 8A TO-247AB |
In Stock1,218 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1700V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 250mOhm @ 8A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 48W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AB |
Package / Case: TO-247-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH |
In Stock23,584 More on Order |
|
Series: U-MOSVII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: SSM |
Package / Case: SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS=30 |
In Stock10,909 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH |
In Stock13,565 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: CST3C |
Package / Case: SC-101, SOT-883 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFETSOT-23 |
In Stock43,720 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNELMOSFETSOT-23 |
In Stock37,731 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 220mA |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNELMOSFETSOT-23 |
In Stock42,803 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
In Stock44,991 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 340mA |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-323 PACKAG |
In Stock26,149 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 340mA |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 200mW |
Operating Temperature: -55°C ~ 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single X34 PB-F SMALL LOW ON RESISTANCE |
In Stock8,111 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: SSM |
Package / Case: SC-75, SOT-416 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 400MA SOT323 |
In Stock13,760 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 440mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT23 |
In Stock13,947 More on Order |
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Series: Automotive, AEC-Q101, SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 26µA |
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single NX7002BKH/SOT8001/DFN0606-3 |
In Stock37,597 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 22.2pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN0606-3 (SOT8001) |
Package / Case: 3-XFDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMH1200UPE/SOT8001/DFN0606-3 |
In Stock32,526 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 520mA |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id: 0.95V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN0606-3 (SOT8001) |
Package / Case: 3-XFDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMH550UNE/SOT8001/DFN0606-3 |
In Stock30,882 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V |
Vgs(th) (Max) @ Id: 0.95V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN0606-3 (SOT8001) |
Package / Case: 3-XFDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMH600UNE/SOT8001/DFN0606-3 |
In Stock32,376 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: 0.95V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN0606-3 (SOT8001) |
Package / Case: 3-XFDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMH950UPE/SOT8001/DFN0606-3 |
In Stock31,032 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 0.95V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN0606-3 (SOT8001) |
Package / Case: 3-XFDFN |