FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 310/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RZF020P01TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2A TUMT3	In Stock307 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V	FET Feature: -	Power Dissipation (Max): 800mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TUMT3	Package / Case: 3-SMD, Flat Leads
SSM3J306T(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A TSM	In Stock146 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 15V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSM	Package / Case: TO-236-3, SC-59, SOT-23-3
SI4435FDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12.6A 8SOIC	In Stock225 More on Order	Series: TrenchFET® Gen III	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V	FET Feature: -	Power Dissipation (Max): 4.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FJ4B01110L1	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single CSP SINGLE P-CHANNEL MOSFET	In Stock448 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 598µA	Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 10V	FET Feature: -	Power Dissipation (Max): 340mW (Ta)	Operating Temperature: -40°C ~ 85°C (TA)	Mounting Type: Surface Mount	Supplier Device Package: ALGA004-W-0606-RA01	Package / Case: 4-XFLGA, CSP
MTM761230LBF	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A WSMINI6	In Stock297 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V	Vgs(th) (Max) @ Id: 1.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: WSMini6-F1-B	Package / Case: 6-SMD, Flat Leads
SQ1470AEH-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.8A SC70	In Stock316 More on Order	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.3W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-363, SC70	Package / Case: 6-TSSOP, SC-88, SOT-363
DMP2066LVT-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V TSOT26	In Stock115 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-26	Package / Case: SOT-23-6
PMV50ENEAR	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO-236AB	In Stock374 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 43mOhm @ 3.9A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 15V	FET Feature: -	Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
ZXMN10A11K	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.4A DPAK	In Stock1,442 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.11W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SI2399DS-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A SOT-23	In Stock245 More on Order	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
PSMN7R5-30MLDX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 57A LFPAK33	In Stock147 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 57A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.6mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 15V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK33	Package / Case: SOT-1210, 8-LFPAK33
AON7702	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 8-DFN	In Stock425 More on Order	Series: SRFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 15V	FET Feature: Schottky Diode (Body)	Power Dissipation (Max): 3.1W (Ta), 23W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x3)	Package / Case: 8-PowerVDFN
BUK7M33-60EX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 24A LFPAK33	In Stock203 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 25V	FET Feature: -	Power Dissipation (Max): 44W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK33	Package / Case: SOT-1210, 8-LFPAK33
SI2336DS-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.2A SOT-23	In Stock265 More on Order	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
PSMN013-30MLC,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 39A LFPAK33	In Stock394 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 1.95V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK33	Package / Case: SOT-1210, 8-LFPAK33
DMP3050LSS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P CH 30V 4.8A 8-SO	In Stock110 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.7W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SQA403EJ-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHAN 30V	In Stock393 More on Order	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V	FET Feature: -	Power Dissipation (Max): 13.6W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6
SSM3J114TU(TE85L)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A UFM	In Stock111 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 149mOhm @ 600mA, 4V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: UFM	Package / Case: 3-SMD, Flat Leads
DMP2004TK-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.43A SOT-523	In Stock326 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V	FET Feature: -	Power Dissipation (Max): 150mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
SI1330EDL-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 240MA SC-70-3	In Stock173 More on Order	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 280mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70-3	Package / Case: SC-70, SOT-323
IPB080N03LGATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TO263-3	In Stock1,771 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN9R0-25MLC,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 55A LFPAK33	In Stock127 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 1.95V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 12.5V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK33	Package / Case: SOT-1210, 8-LFPAK33
SI1441EDH-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A SOT-363	In Stock296 More on Order	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 2.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
DMN4800LSSQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.6A 8-SO	In Stock288 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.46W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RQ5E030AJTCL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 3A TSMT3	In Stock227 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V	FET Feature: -	Power Dissipation (Max): 1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT3	Package / Case: SC-96
SI2338DS-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A SOT23	In Stock194 More on Order	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM5N15FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100MA ESV	In Stock296 More on Order	Series: π-MOSVI	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V	FET Feature: -	Power Dissipation (Max): 150mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ESV	Package / Case: SOT-553
TSM160P02CS RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 11A 8SOP	In Stock180 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
MCQ4406-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOP-8 PACKAGE	In Stock137 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
MCQ4407-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single P-CHANNEL MOSFET, SOP-8 PACKAGE	In Stock260 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)

«
‹
1
...
307
308
309
310 (current)
311
312
313
...
999
›
»