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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 313/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.6A POWERDI333 |
In Stock450 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 930mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8DFN |
In Stock422 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5W (Ta), 46W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerSMD, Flat Leads |
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Nexperia |
Transistors - FETs, MOSFETs - Single PSMN3R5-25MLD/MLFPAK/REEL 7 Q |
In Stock228 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1334pF @ 12V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5A 8DFN |
In Stock146 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (3x3) |
Package / Case: 8-PowerVDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SO8FL |
In Stock294 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 770mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 37.7A LFPAK |
In Stock423 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 59.4W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 12A DPAK |
In Stock102 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 48W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.6A POWERDI |
In Stock439 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 900mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 8A 6TSOP |
In Stock203 More on Order |
|
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 678pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 5W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 2.3A/6A SOT223 |
In Stock311 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1239pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 13.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 45V 4A TSMT6 |
In Stock419 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V |
Vgs (Max): 21V |
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 600mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15.1A 1212-8 |
In Stock162 More on Order |
|
Series: ThunderFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 26W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A MPT6 |
In Stock219 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: MPT6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.3A 8-SOIC |
In Stock357 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 770mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 3A DPAK |
In Stock191 More on Order |
|
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 37W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5A 6WCSP |
In Stock202 More on Order |
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Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1mA, 3V |
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: - |
Package / Case: 6-UFBGA, WLCSP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock350 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.3W (Ta), 43W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 84A LFPAK |
In Stock316 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 84A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 1.95V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 61W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A DPAK |
In Stock441 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3A SOT223 |
In Stock334 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 (TO-261) |
Package / Case: TO-261-4, TO-261AA |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.86A SOT563 |
In Stock271 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V |
Vgs (Max): 8V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-563 |
Package / Case: SOT-563, SOT-666 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.82A 20A 8WDFN |
In Stock307 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 327pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 20W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-WDFN (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 1.2A SOT89 |
In Stock499 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.5W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89/PCP-2 |
Package / Case: TO-243AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 27A DPAK |
In Stock477 More on Order |
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Series: STripFET™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V |
Vgs (Max): ±22V |
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 33A LFPAK |
In Stock239 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 2275pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 75W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single PCH -20V -6.5A MIDDLE POWER MOSF |
In Stock207 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SC-95-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A U8FL |
In Stock267 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 26W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-WDFN (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.6A DPAK |
In Stock111 More on Order |
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Series: QFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 44W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8HSOP |
In Stock238 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 28A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 30W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-HSOP |
Package / Case: 8-PowerTDFN |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.5A WSMINI6 |
In Stock129 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: WSMini6-F1-B |
Package / Case: 6-SMD, Flat Leads |