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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 428/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NVMFS5C468NWFT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

40V 12 MOHM T6 S08FL SING

In Stock444

More on Order

Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NVD4810NT4G-VF01
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 54A DPAK

In Stock454

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Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 11.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK (SINGLE GAUGE)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP3007SFG-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 70A POWERDI3333

In Stock232

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
NVMFS5C673NLAFT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 50A 5DFN

In Stock397

More on Order

Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
ISP25DP06LMXTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V SOT223-4

In Stock495

More on Order

Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA
DMP3018SFK-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 10.2A DFN2523-6

In Stock279

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4414pF @ 15V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2523-6
Package / Case: 6-PowerUDFN
DMTH10H025LPS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 61V-100V POWERDI50

In Stock115

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
MTM861240LBF
Panasonic Electronic Components

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2A WSSMINI6-F1

In Stock385

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
FET Feature: -
Power Dissipation (Max): 540mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: WSSMini6-F1
Package / Case: 6-SMD, Flat Leads
AOD2816
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N CH 80V 8.5A TO252

In Stock242

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1109pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP3017SFGQ-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 11.5A

In Stock345

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
FET Feature: -
Power Dissipation (Max): 940mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
DMT3004LFG-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 30V 10.4A POWERDI

In Stock360

More on Order

Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
DMT3004LFG-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 30V 10.4A POWERDI

In Stock114

More on Order

Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
NTMFS4C024NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 21.7A 78A 5DFN

In Stock284

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4C05NAT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 21.7A 78A 5DFN

In Stock177

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTTFS015P03P8ZTAG
ON Semiconductor

Transistors - FETs, MOSFETs - Single

PFET U8FL 30V 15MO

In Stock405

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62.3nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2706pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
IPD14N06S280ATMA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 17A TO252-3

In Stock150

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Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 293pF @ 25V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMT34M2LPS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 25V 30V POWERDI506

In Stock485

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN
BUK7Y15-60EX
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 53A LFPAK

In Stock398

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1838pF @ 25V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
CPC3708CTR
IXYS Integrated Circuits Division

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 350V 0.005A SOT-89

In Stock360

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA
CPC3708ZTR
IXYS Integrated Circuits Division

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 350V 0.005A SOT-223

In Stock190

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
TPN6R303NC,LQ
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 30V 20A 8TSON-ADV

In Stock433

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Series: U-MOSVIII
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN
DMN12M7UCA10-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 8V-24V X4-DSN3015-

In Stock266

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
NVD3055L170T4G-VF01
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 9A DPAK

In Stock158

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Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V
FET Feature: -
Power Dissipation (Max): 28.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMT32M5LPS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 150A POWERDI5060

In Stock206

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3944pF @ 25V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN
TPC8132,LQ(S
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 7A 8SOP

In Stock136

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Series: U-MOSVI
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
IPS60R800CEAKMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

CONSUMER

In Stock410

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
NVMFS5C677NLT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V S08FL SINGLE

In Stock498

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Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
IRFR220NTRRPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 5A DPAK

In Stock250

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Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMT6017LDV-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 61V-100V POWERDI33

In Stock468

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMT6017LDV-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 61V-100V POWERDI33

In Stock352

More on Order

Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -