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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 430/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TJ15P04M3,RQ(S
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 15A DPAK-3

In Stock258

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Series: U-MOSVI
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0355DSP-00#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 12A 8-SOP

In Stock235

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
SFT1452-TL-W
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 3A DPAK

In Stock290

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK/TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SIS444DN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 35A POWERPAK1212

In Stock369

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 15V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FDD86381-F085
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 25A DPAK

In Stock349

More on Order

Series: Automotive, AEC-Q101, PowerTrench®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 40V
FET Feature: -
Power Dissipation (Max): 48.4W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024NTRLPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 17A DPAK

In Stock360

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Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024NTRRPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 17A DPAK

In Stock450

More on Order

Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP6023LFG-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 7.7A POWERDI3333

In Stock321

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
DMNH4011SPS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 13A POWERDI

In Stock393

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Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN
FQD2N60CTM-WS
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 1.9A

In Stock458

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP4013LFGQ-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET PCH 40V 10.3A POWERDI

In Stock458

More on Order

Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
DMP3007SPS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 90A POWERDI5060

In Stock139

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN
NVTFS6H880NWFTAG
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 8WDFN

In Stock422

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
NVMFS5C456NLAFT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 87A U8FL

In Stock101

More on Order

Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
FDS8876
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 12.5A 8SOIC

In Stock123

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Series: PowerTrench®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
SIR474DP-T1-RE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 20A POWERPAKSO-8

In Stock291

More on Order

Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
FET Feature: -
Power Dissipation (Max): 29.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
AOTF4N60
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4A TO220F

In Stock480

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3F
Package / Case: TO-220-3 Full Pack
NVGS3441T1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.35A 6-TSOP

In Stock100

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6
BSC882N03LSGATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TDSON-8

In Stock118

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 34V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 15V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN
NTMFS4936NCT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.6A SO-8FL

In Stock470

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3044pF @ 15V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 43W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
SIHU3N50D-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 3A TO251 IPAK

In Stock268

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
SIHU3N50DA-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 500V 3A IPAK

In Stock220

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
NVMFS5C460NLAFT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 21A 78A 5DFN

In Stock222

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Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
PHD97NQ03LT,118
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 75A DPAK

In Stock369

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 12V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25DP06LMATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V TO252-3

In Stock278

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Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25DP06NMATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V TO252-3

In Stock349

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Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH8012LPSW-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 53.7A POWERDI506

In Stock152

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN
SIHD3N50DT4-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V DPAK TO-252

In Stock466

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
IPL70R2K1CESATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET COOLMOS 700V 8TSON

In Stock388

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
TSM4N60ECH C5G
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 4A TO251

In Stock492

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V
FET Feature: -
Power Dissipation (Max): 86.2W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA