FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 476/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMJS1D7N04CTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET	In Stock440 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 130µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 106W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-LFPAK	Package / Case: 8-PowerSMD, Gull Wing
SIPC08N80C3X1SA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single TRANSISTOR N-CH	In Stock400 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTMFS5H630NLT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6DFN	In Stock260 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NVD5802NT4G-VF01	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 101A DPAK	In Stock308 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPI80N04S404AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TO262-3-1	In Stock300 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 35µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80N04S404AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TO220-3-1	In Stock369 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 35µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
IRLU3636PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A IPAK	In Stock397 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V	FET Feature: -	Power Dissipation (Max): 143W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IPB45N06S409ATMA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO263-3	In Stock410 More on Order	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 45A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 4V @ 34µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540NSTRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 23A D2PAK	In Stock269 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 110W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF5305STRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A D2PAK	In Stock151 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 31A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RJK5033DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A MP3A	In Stock376 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9020TRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 9.9A DPAK	In Stock457 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR6215TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock294 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8062-H,LQ(CM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8SOP-ADV	In Stock269 More on Order	Series: U-MOSVII-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 28A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 300µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta), 42W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP Advance (5x5)	Package / Case: 8-PowerVDFN
IPD90P04P405AUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 90A TO252-3	In Stock249 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
FCD5N60-F085	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.6A DPAK	In Stock233 More on Order	Series: Automotive, AEC-Q101, SuperFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 54W (Tj)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-PAK (TO-252)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD380P06NMATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3	In Stock354 More on Order	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 4V @ 1.7mA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 30V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3-313	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK7P60W,RVQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 7A DPAK	In Stock383 More on Order	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 350µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V	FET Feature: Super Junction	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK80S04K3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A DPAK-3	In Stock381 More on Order	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK80S06K3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A DPAK-3	In Stock442 More on Order	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTMJS2D5N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 155A	In Stock240 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 113A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 135µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.9W (Ta), 113A (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-LFPAK	Package / Case: 8-PowerSMD, Gull Wing
NTMYS2D9N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V LFPAK4	In Stock276 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFR9024TRRPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 8.8A DPAK	In Stock416 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK35E08N1,S1X	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 55A TO-220	In Stock239 More on Order	Series: U-MOSVIII-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 300µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V	FET Feature: -	Power Dissipation (Max): 72W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
PSMN6R9-100YSFX	Nexperia	Transistors - FETs, MOSFETs - Single PSMN6R9-100YSF/SOT669/LFPAK	In Stock161 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100A	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 50.3nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 238W	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
TSM4N90CI C0G	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 900V 4A ITO220	In Stock449 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V	FET Feature: -	Power Dissipation (Max): 38.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ITO-220AB	Package / Case: TO-220-3 Full Pack, Isolated Tab
NVMFS5C430NWFAFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 35A 185A 5DFN	In Stock153 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 106W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NVMJS1D2N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK	In Stock130 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 170µA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 128W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-LFPAK	Package / Case: 8-PowerSMD, Gull Wing
STL51N3LLH5	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 51A POWERFLAT56	In Stock173 More on Order	Series: STripFET™ V	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 51A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V	Vgs (Max): ±22V	Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6)	Package / Case: 8-PowerVDFN
FCPF850N80Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6A TO220F	In Stock200 More on Order	Series: SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 600µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V	FET Feature: -	Power Dissipation (Max): 28.4W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack

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