FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 478/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOB296L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 9.5A TO263	In Stock360 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta), 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVMFS5C426NWFAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 41A 235A 5DFN	In Stock355 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 128W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
SPP04N50C3XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_LEGACY	In Stock161 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK753R1-40E,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB	In Stock101 More on Order	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V	FET Feature: -	Power Dissipation (Max): 234W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
TSM4N80CI C0G	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 4A ITO220	In Stock361 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V	FET Feature: -	Power Dissipation (Max): 38.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ITO-220AB	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRFH5302DTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 29A 8VQFN	In Stock413 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3635pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.6W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PQFN (5x6) Single Die	Package / Case: 8-PowerVDFN
SIR878ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A PPAK SO-8	In Stock433 More on Order	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 44.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SIHD7N60E-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO-252	In Stock110 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V	FET Feature: -	Power Dissipation (Max): 78W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-PAK (TO-252AA)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AON6154	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 45V 100A 8DFN	In Stock395 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6575pF @ 22.5V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN-EP (5x6)	Package / Case: 8-PowerSMD, Flat Leads
DMTH10H010LCTB-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 108A TO220AB	In Stock210 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 108A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2592pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 166W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NVMYS1D2N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK	In Stock180 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 180µA	Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6330pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.9W (Ta), 134W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK4 (5x6)	Package / Case: SOT-1023, 4-LFPAK
NVMYS2D2N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET	In Stock175 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 180µA	Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.9W (Ta), 134W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK4 (5x6)	Package / Case: SOT-1023, 4-LFPAK
AOT286L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 80V 13A TO220	In Stock227 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3142pF @ 40V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta), 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
TJ60S06M3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 60A DPAK-3	In Stock368 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 60A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 7760pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TJ80S04M3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 80A DPAK-3	In Stock312 More on Order	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP22M2UPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V POWERDI5060-8	In Stock236 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 476nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 12826pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
SI4413DDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 8SOIC	In Stock495 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 125°C	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF6724MTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 27A DIRECTFET	In Stock333 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6711STRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 19A DIRECTFET-SQ	In Stock405 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ SQ	Package / Case: DirectFET™ Isometric SQ
IRF6727MTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 32A DIRECTFET	In Stock162 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
AUIRFR8403TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A DPAK	In Stock259 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3171pF @ 25V	FET Feature: -	Power Dissipation (Max): 99W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FQI4N80TU	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3.9A I2PAK	In Stock119 More on Order	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.13W (Ta), 130W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK (TO-262)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
N0602N-S19-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO-220	In Stock475 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta), 156W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Isolated Tab
N0603N-S23-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO-262	In Stock395 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta), 156W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPP16CN10NGHKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-220	In Stock264 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V	Vgs(th) (Max) @ Id: 4V @ 61µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
PSMN8R5-100PSFQ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 98A TO220AB	In Stock150 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 98A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 7V, 10V	Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3181pF @ 50V	FET Feature: -	Power Dissipation (Max): 183W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRF830PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single PLANAR >= 100V	In Stock207 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V	FET Feature: -	Power Dissipation (Max): 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
SIHA12N50E-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10.5A TO-220FP	In Stock252 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 100V	FET Feature: -	Power Dissipation (Max): 32W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220 Full Pack	Package / Case: TO-220-3 Full Pack
TN2501N8-G	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 18V 400MA SOT89-3	In Stock226 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 18V	Current - Continuous Drain (Id) @ 25°C: 400mA (Tj)	Drive Voltage (Max Rds On, Min Rds On): 1.2V, 3V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 200mA, 3V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.6W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-243AA (SOT-89)	Package / Case: TO-243AA
VN0300L-G-P002	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 640MA TO92-3	In Stock303 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V	FET Feature: -	Power Dissipation (Max): 1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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