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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 497/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMJ70H900HJ3
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 651V 800V TO251
In Stock315

More on Order
Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 50V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3, IPak, Short Leads
SPI07N60C3XKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO-262
In Stock212

More on Order
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPB160N04S4LH1ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-7
In Stock128

More on Order
Series: Automotive, AEC-Q101, OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 14950pF @ 25V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
IPA90R800C3XKSA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V TO220-3
In Stock364

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
IPP90R800C3XKSA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V TO-220
In Stock322

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 12A TO-220SIS
In Stock358

More on Order
Series: π-MOSVII
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
TK35E10K3(S1SS-Q)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 35A TO-220AB
In Stock456

More on Order
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
IPB90N06S4L04ATMA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 90A TO263-3
In Stock164

More on Order
Series: Automotive, AEC-Q101, OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI7342DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9A PPAK SO-8
In Stock155

More on Order
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
IXTY02N120P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 0.2A DPAK
In Stock145

More on Order
Series: Polar™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C410NWFAFT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 46A 300A 5DFN
In Stock191

More on Order
Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
TK8A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V 7.5A TO-220SIS
In Stock194

More on Order
Series: π-MOSVII
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
IRFS59N10DTRLP
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 59A D2PAK
In Stock391

More on Order
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTY1R4N120PHV
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH
In Stock498

More on Order
Series: Polar™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 25V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOB15S65L
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 15A TO263
In Stock486

More on Order
Series: aMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFSL7537PBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 173A TO262
In Stock464

More on Order
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF1405STRRPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 131A D2PAK
In Stock336

More on Order
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUD19N20-90-T4-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 19A TO252
In Stock409

More on Order
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2701A
Sanken

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V TO-220F
In Stock255

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
VP0550N3-G-P013
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 500V 0.054A TO92-3
In Stock265

More on Order
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STD95NH02LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 24V 80A DPAK
In Stock319

More on Order
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SIPC18N50C3X1SA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRANSISTOR N-CH
In Stock324

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
AOT2904
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A TO220
In Stock202

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Series: AlphaSGT™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7085pF @ 50V
FET Feature: -
Power Dissipation (Max): 326W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
IPB80N06S2L07ATMA3
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 80A TO263-3
In Stock468

More on Order
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
FET Feature: -
Power Dissipation (Max): 210W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA040N06NXKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V TO220-3
In Stock344

More on Order
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 69A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 30V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack
TK160F10N1L,LQ
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

X35 PB-F POWER MOSFET TRANSISTOR
In Stock445

More on Order
Series: U-MOSVIII-H
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 10V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM(W)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLR014TR
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 7.7A DPAK
In Stock291

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014TRL
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 7.7A DPAK
In Stock119

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5H409NLT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 41A SO8FL
In Stock394

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
NVMFS5A140PLZWFT3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

-40V4.2MOHMSINGLE
In Stock418

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Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads