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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 494/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R180C7ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO252-3	In Stock416 More on Order	Series: CoolMOS™ C7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 260µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPI70N12S311AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL_100+	In Stock352 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPI70N12S3L12AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL_100+	In Stock171 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPP70N12S311AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL_100+	In Stock152 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPP70N12S3L12AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL_100+	In Stock108 More on Order	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
TK20G60W,RVQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 20A D2PAK	In Stock498 More on Order	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V	FET Feature: Super Junction	Power Dissipation (Max): 165W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB120N04S4L02ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3	In Stock220 More on Order	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 110µA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): +20V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V	FET Feature: -	Power Dissipation (Max): 158W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP062NE7N3GXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO220-3	In Stock286 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 70µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3840pF @ 37.5V	FET Feature: -	Power Dissipation (Max): 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
NTMFS4965NFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 65A SO8FL	In Stock431 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
TK3A65DA(STA4,QM)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 2.5A TO-220SIS	In Stock138 More on Order	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
IPI80N08S207AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO262-3	In Stock468 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3-1	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
RJK2075DPA-00#J5A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 200V 20A WPAK	In Stock423 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V	FET Feature: -	Power Dissipation (Max): 65W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: WPAK(3F) (5x6)	Package / Case: 8-PowerVDFN
FQI7N80TU	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6.6A I2PAK	In Stock381 More on Order	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.13W (Ta), 167W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK (TO-262)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FCPF11N60T	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-220F	In Stock394 More on Order	Series: SuperFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V	FET Feature: -	Power Dissipation (Max): 36W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack
IPB65R225C7ATMA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A TO-263-3	In Stock321 More on Order	Series: CoolMOS™ C7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 240µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VN1206L-G-P002	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 120V 0.23A TO92-3	In Stock478 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 120V	Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NVMFS5C410NAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 46A 300A 5DFN	In Stock185 More on Order	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.9W (Ta), 166W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
IPI65R380C6XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10.6A TO262	In Stock235 More on Order	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 320µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPD90N08S405ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO252-3	In Stock452 More on Order	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 90µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V	FET Feature: -	Power Dissipation (Max): 144W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3-313	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPP70N10S3L12AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70A TO220-3	In Stock123 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 83µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
FDMS015N04B	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 31.3A 8-PQFN	In Stock224 More on Order	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8725pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PQFN (5x6)	Package / Case: 8-PowerTDFN
IRFR5305PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A DPAK	In Stock364 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 31A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9Z24STRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 11A D2PAK	In Stock114 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z24STRRPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 11A D2PAK	In Stock101 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI4451DY-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 10A 8-SOIC	In Stock302 More on Order	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 8.25mOhm @ 14A, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 850µA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IPB65R280E6ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3	In Stock338 More on Order	Series: CoolMOS™ E6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 440µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FCPF260N65FL1	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO220	In Stock220 More on Order	Series: FRFET®, SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 1.5mA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V	FET Feature: -	Power Dissipation (Max): 36W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack
IRF9620SPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 3.5A D2PAK	In Stock288 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta), 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF4104	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220	In Stock437 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
IPB180N03S4L01ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 180A TO263-7-3	In Stock213 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 140µA	Gate Charge (Qg) (Max) @ Vgs: 239nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 25V	FET Feature: -	Power Dissipation (Max): 188W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-7-3	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

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