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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 502/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 400V 0.086A 8SOIC |
In Stock306 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 740mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 140A TO220AB |
In Stock432 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 111.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8474pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 187W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO-220AB |
In Stock442 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock292 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO-220-3 |
In Stock456 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 98A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 195A D2PAK |
In Stock482 More on Order |
|
Series: HEXFET®, StrongIRFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 294W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 651V 800V TO251 |
In Stock379 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 113W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251 |
Package / Case: TO-251-3, IPak, Short Leads |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock405 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A I2PAK |
In Stock258 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 338W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I2PAK |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 110A TO263 |
In Stock218 More on Order |
|
Series: Automotive, AEC-Q101, PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 176W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D²PAK (TO-263AB) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single T6 40V SG NCH SO8FL HEFET |
In Stock449 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7288pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.9W (Ta), 179W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single T6 40V SG NCH SO8FL HEFET |
In Stock111 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7288pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.9W (Ta), 179W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 362A |
In Stock203 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 700µOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.9W (Ta), 179W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7.5A TO-220SIS |
In Stock323 More on Order |
|
Series: π-MOSVII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220SIS |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 75A TO-220AB |
In Stock332 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 48V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V TO220-3 TU |
In Stock211 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 64.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4043pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 240W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 6.2A IPAK |
In Stock260 More on Order |
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Series: DTMOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V |
FET Feature: Super Junction |
Power Dissipation (Max): 60W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4.6A DIRECTFET |
In Stock314 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 4.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 89W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MZ |
Package / Case: DirectFET™ Isometric MZ |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.7A 5DFN |
In Stock270 More on Order |
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Series: DTMOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V |
FET Feature: Super Junction |
Power Dissipation (Max): 88.3W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-DFN-EP (8x8) |
Package / Case: 4-VSFN Exposed Pad |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH BARE DIE |
In Stock489 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 21A D2PAK |
In Stock146 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 94W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.8A SO8FL |
In Stock168 More on Order |
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Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.8A SO8FL |
In Stock473 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SO8FL |
In Stock319 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.8A SO8FL |
In Stock447 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 9.5A TO-220F |
In Stock357 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 56W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 105A TO263 |
In Stock366 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO263 |
In Stock191 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 36A SO8FL |
In Stock468 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 167W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET_(75V 120V( |
In Stock109 More on Order |
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Series: OptiMOS™-5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 167W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-34 |
Package / Case: 8-PowerTDFN |