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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 505/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF840LPBF
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 8A TO-262
In Stock459

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 40A TO-220AB
In Stock312

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Series: U-MOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
NTMFS5C612NLWFT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 235A 5DFN
In Stock225

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
SI4368DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 17A 8-SOIC
In Stock363

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Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
VP2206N3-G-P003
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 640MA TO92-3
In Stock268

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
FET Feature: -
Power Dissipation (Max): 740mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 15A TO-220SIS
In Stock291

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Series: π-MOSVII
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
IRFI3306GPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A TO220
In Stock491

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3 Full Pack
IPB50R199CPATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 17A TO-263
In Stock144

More on Order
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD17556Q5BT
Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8VSON
In Stock463

More on Order
Series: NexFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1.65V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 15V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 191W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-VSON-CLIP (5x6)
Package / Case: 8-PowerTDFN
IPB100N08S2L07ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 100A TO263-3
In Stock204

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Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB100N08S207ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 100A TO263-3
In Stock321

More on Order
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOT460
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 85A TO-220
In Stock468

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 30V
FET Feature: -
Power Dissipation (Max): 268W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
TK7A60W,S4VX
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 600V 7A TO-220SIS
In Stock417

More on Order
Series: DTMOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
FET Feature: Super Junction
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
IXTP2N65X2
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 2A X2 TO-220
In Stock122

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
IXTP4N65X2
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 4A X2 TO-220
In Stock103

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
CSD18542KCS
Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 200A TO220-3
In Stock498

More on Order
Series: NexFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
NTMFS5C410NLTWFT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 312A SO8FL
In Stock110

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
IPB65R190CFDATMA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

HIGH POWER_LEGACY
In Stock387

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Series: CoolMOS™ CFD2
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z10
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 6.7A TO220AB
In Stock412

More on Order
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
IPA60R210CFD7XKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

LOW POWER_NEW
In Stock371

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Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
IPP60R210CFD7XKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

LOW POWER_NEW
In Stock432

More on Order
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMJ65H650SCTI
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 501V-650V ITO-220A
In Stock491

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
TK10A60W,S4X
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 600V 9.7A TO-220
In Stock283

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Series: DTMOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 300V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3 Full Pack
IPB180N04S4L01ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-7
In Stock418

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Series: Automotive, AEC-Q101, OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 19100pF @ 25V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
CSD18502KCS
Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 100A TO220-3
In Stock368

More on Order
Series: NexFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 20V
FET Feature: -
Power Dissipation (Max): 259W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
AOB482L
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V D2PAK
In Stock287

More on Order
Series: SDMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK8Q65W,S1Q
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7.8A IPAK
In Stock314

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Series: DTMOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Stub Leads, IPak
TK7Q60W,S1VQ
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7A IPAK-3
In Stock137

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Series: DTMOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Stub Leads, IPak
IXFA10N60P-TRL
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10A D2-PAK
In Stock150

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
FCPF125N65S3
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 24A TO220F
In Stock206

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Series: SuperFET® III
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 400V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack