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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 573/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 180A SP6 |
In Stock257 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 495A SP6 |
In Stock165 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 495A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 495A SP6 |
In Stock298 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 495A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 417A SP6 |
In Stock167 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 417A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1560W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 570A SP6 |
In Stock403 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 570A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1660W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 690A MODULE |
In Stock482 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 690A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 6V @ 130mA |
Gate Charge (Qg) (Max) @ Vgs: 2300nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2500W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: Y3-DCB |
Package / Case: Y3-DCB |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 145A SP6 |
In Stock326 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 145A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3250W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 116A SP6 |
In Stock322 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 116A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: 5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 580A SP6 |
In Stock396 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 580A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V |
Vgs(th) (Max) @ Id: 5V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2270W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 335A SP6 |
In Stock229 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 335A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 167.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 129A SP6 |
In Stock450 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 129A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: 1116nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 31100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2272W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 171A SP6 |
In Stock394 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 171A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80mOhm @ 85.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 5000W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 215A SP6 |
In Stock118 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 215A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 5000W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 590A Y3-DCB |
In Stock362 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 590A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 6V @ 110mA |
Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2200W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: Y3-DCB |
Package / Case: Y3-DCB |
|
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 171A SP6 |
In Stock167 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 171A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80mOhm @ 85.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 5000W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 215A SP6 |
In Stock443 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 215A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 5000W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Honeywell Aerospace |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 8-DIP |
In Stock166 More on Order |
|
Series: HTMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V |
Vgs (Max): 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V |
FET Feature: - |
Power Dissipation (Max): 50W (Tj) |
Operating Temperature: -55°C ~ 225°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: 8-CDIP-EP |
Package / Case: 8-CDIP Exposed Pad |
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Honeywell Aerospace |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 8-DIP |
In Stock268 More on Order |
|
Series: HTMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V |
Vgs (Max): 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V |
FET Feature: - |
Power Dissipation (Max): 50W (Tj) |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: - |
Package / Case: 8-CDIP Exposed Pad |
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Honeywell Aerospace |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 4-PIN |
In Stock497 More on Order |
|
Series: HTMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V |
Vgs (Max): 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V |
FET Feature: - |
Power Dissipation (Max): 50W (Tj) |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: - |
Package / Case: - |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 600V 100A |
In Stock350 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 769W (Tc) |
Operating Temperature: -55°C ~ 225°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-258 |
Package / Case: TO-258-3, TO-258AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT-23 |
In Stock273 More on Order |
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Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-252-3 |
In Stock298 More on Order |
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Series: CoolMOS™ CE |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 28W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 82A 5X6 PQFN |
In Stock431 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 46W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 30A TO252-3 |
In Stock411 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 136W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.2A TO252-3 |
In Stock413 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 28.4W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO-263 |
In Stock420 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 214W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3-2 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 4.5A D2PAK |
In Stock242 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3-2 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DIRECTFET |
In Stock356 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 89W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MX |
Package / Case: DirectFET™ Isometric MX |
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EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V BUMPED DIE |
In Stock244 More on Order |
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Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7.2A TO252 |
In Stock475 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |