FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 576/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF520	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A TO-220	In Stock455 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STH15NB50FI	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10.5A ISOWAT218	In Stock121 More on Order	Series: PowerMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOWATT-218	Package / Case: ISOWATT-218-3
STP6NB90	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 5.8A TO-220	In Stock138 More on Order	Series: PowerMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): 135W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STP50NE08	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 50A TO-220	In Stock100 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STW11NB80	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-247	In Stock108 More on Order	Series: PowerMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V	FET Feature: -	Power Dissipation (Max): 190W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
STW80NE06-10	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO-247	In Stock239 More on Order	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V	FET Feature: -	Power Dissipation (Max): 250W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
STD10PF06T4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 10A DPAK	In Stock144 More on Order	Series: STripFET™ II	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD50NH02LT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 50A DPAK	In Stock257 More on Order	Series: STripFET™ III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STS25NH3LL	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8-SOIC	In Stock396 More on Order	Series: STripFET™ III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STD1HNC60T4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A DPAK	In Stock187 More on Order	Series: PowerMESH™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD12NF06LT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 12A DPAK	In Stock460 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 42.8W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF740	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 10A TO-220	In Stock297 More on Order	Series: PowerMESH™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
2N7000	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 350MA TO-92	In Stock216 More on Order	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
2N7002	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.2A SOT-23-3	In Stock370 More on Order	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V	FET Feature: -	Power Dissipation (Max): 350mW (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
IRF620	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6A TO-220	In Stock297 More on Order	Series: PowerMESH™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STD30PF03LT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 24A DPAK	In Stock232 More on Order	Series: STripFET™ II	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD60NH03L-1	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A I-PAK	In Stock160 More on Order	Series: STripFET™ III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
STD70NH02LT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 60A DPAK	In Stock423 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STN1N20	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 1A SOT223	In Stock453 More on Order	Series: MESH OVERLAY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 206pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.9W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
STP11NM60FP	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO220FP	In Stock378 More on Order	Series: MDmesh™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
STP16NS25	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 16A TO-220	In Stock475 More on Order	Series: MESH OVERLAY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STP36NF06	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO-220	In Stock453 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STP4NK50Z	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A TO-220	In Stock492 More on Order	Series: SuperMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STP5NK40Z	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 3A TO-220	In Stock303 More on Order	Series: SuperMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
STS12NF30L	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A 8-SOIC	In Stock108 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STS17NF3LL	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A 8-SOIC	In Stock326 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STS2DPFS20V	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.5A 8-SOIC	In Stock462 More on Order	Series: STripFET™ II	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 600mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STS4DNFS30L	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A 8-SOIC	In Stock218 More on Order	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STS5PF20V	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5A 8-SOIC	In Stock236 More on Order	Series: STripFET™ II	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 450mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 2.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STS9NF30L	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8-SOIC	In Stock153 More on Order	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)

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