Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 757/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 32A DPAK |
In Stock261 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK |
In Stock390 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK |
In Stock313 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 1.04W (Ta), 75W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A IPAK |
In Stock109 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 1.04W (Ta), 75W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK |
In Stock337 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 1.04W (Ta), 75W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.6A IPAK |
In Stock493 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.6A IPAK |
In Stock165 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.6A DPAK |
In Stock266 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.9A IPAK |
In Stock374 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.9A DPAK |
In Stock488 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK |
In Stock133 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A IPAK |
In Stock308 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A IPAK |
In Stock489 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A IPAK |
In Stock490 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A IPAK |
In Stock230 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK |
In Stock383 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK |
In Stock406 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK |
In Stock138 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 70A DPAK |
In Stock378 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 100W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 70A DPAK |
In Stock203 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 100W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8.5A DPAK |
In Stock324 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta), 58W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8.5A IPAK |
In Stock249 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta), 58W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8.5A IPAK |
In Stock115 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta), 58W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8.5A IPAK |
In Stock161 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta), 58W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8.5A DPAK |
In Stock443 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta), 58W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.5A DPAK |
In Stock317 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.5A IPAK |
In Stock151 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.5A IPAK |
In Stock218 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.5A IPAK |
In Stock239 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.5A DPAK |
In Stock153 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |