FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 759/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTHD3101FT3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.2A CHIPFET	In Stock394 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTHD3101FT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.2A CHIPFET	In Stock346 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTHD5904NT1	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A CHIPFET	In Stock273 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V	FET Feature: -	Power Dissipation (Max): 640mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTHD5904NT3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A CHIPFET	In Stock196 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V	FET Feature: -	Power Dissipation (Max): 640mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTHD5904NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A CHIPFET	In Stock403 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V	FET Feature: -	Power Dissipation (Max): 640mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTHS4501NT1	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.9A CHIPFET	In Stock456 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V	FET Feature: -	Power Dissipation (Max): 1.3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ChipFET™	Package / Case: 8-SMD, Flat Lead
NTJS3151PT2	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.7A SOT-363	In Stock394 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 400mV @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS3157NT2	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.2A SOT-363	In Stock172 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 400mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS3157NT2G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.2A SOT-363	In Stock194 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS3157NT4	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.2A SOT-363	In Stock384 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 400mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS3157NT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.2A SOT-363	In Stock220 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS4405NT1	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 1A SOT-363	In Stock460 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V	FET Feature: -	Power Dissipation (Max): 630mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS4405NT4	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 1A SOT-363	In Stock175 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V	FET Feature: -	Power Dissipation (Max): 630mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTJS4405NT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 1A SOT-363	In Stock467 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V	FET Feature: -	Power Dissipation (Max): 630mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-88/SC70-6/SOT-363	Package / Case: 6-TSSOP, SC-88, SOT-363
NTLGF3402PT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A 6-DFN	In Stock165 More on Order	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 140mOhm @ 2.7A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.14W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-DFN (3x3)	Package / Case: 6-VDFN Exposed Pad
NTLGF3501NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.8A 6-DFN	In Stock383 More on Order	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.14W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-DFN (3x3)	Package / Case: 6-VDFN Exposed Pad
NTLJS4159NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.6A 6DFN	In Stock236 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 15V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-WDFN (2x2)	Package / Case: 6-WDFN Exposed Pad
NTMFS4108NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13.5A SO8FL	In Stock439 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.1W (Ta), 96.2W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4119NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SO8FL	In Stock214 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4120NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SO8FL	In Stock365 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4121NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SO8FL	In Stock396 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.25mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4122NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.1A SO8FL	In Stock326 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4701NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.7A SO8FL	In Stock115 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4701NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.7A SO8FL	In Stock336 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4707NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.9A SO8FL	In Stock267 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 24V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4707NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.9A SO8FL	In Stock180 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 24V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4708NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.8A SO8FL	In Stock462 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 24V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4708NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.8A SO8FL	In Stock255 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 24V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
NTMS4706NR2	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.4A 8-SOIC	In Stock319 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 10.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V	FET Feature: -	Power Dissipation (Max): 830mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NTMS4706NR2G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.4A 8-SOIC	In Stock347 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 10.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V	FET Feature: -	Power Dissipation (Max): 830mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)

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