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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 764/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11.5A POWER33 |
In Stock167 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-Power33 (3x3) |
Package / Case: 8-PowerVDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8A SSOT-8 |
In Stock239 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SuperSOT™-8 |
Package / Case: 8-LSOP (0.130", 3.30mm Width) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 9A BGA |
In Stock236 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1127pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 12-BGA (2x2.5) |
Package / Case: 12-WFBGA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7A TO-220F |
In Stock479 More on Order |
|
Series: UniFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 39W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A TO-220F |
In Stock325 More on Order |
|
Series: FRFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A SSOT-6 |
In Stock355 More on Order |
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Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SuperSOT™-6 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.1A MICROFET8 |
In Stock217 More on Order |
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Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP, MicroFET (3x1.9) |
Package / Case: 8-PowerWDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 8-SOIC |
In Stock170 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6925pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 360MA SOT-89 |
In Stock171 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89-3 |
Package / Case: TO-243AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A DPAK |
In Stock228 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 153W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252AA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320A SOT-227B |
In Stock443 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 320A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 680W (Tc) |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 64A TO-3PN |
In Stock487 More on Order |
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Series: UltraFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 34mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10175pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 357W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3PN |
Package / Case: TO-3P-3, SC-65-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4.5A D-PAK |
In Stock242 More on Order |
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Series: UniFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A FLFBGA 3.5X4 |
In Stock117 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 20-FLFBGA (3.55x4) |
Package / Case: 20-FLFBGA (30 pos) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.4A TO-3P |
In Stock277 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 198W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TO-220AB |
In Stock443 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 254W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A BGA |
In Stock146 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 18-BGA (2.5x4) |
Package / Case: 18-WFBGA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A I4-PAC-5 |
In Stock160 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS i4-PAC™ |
Package / Case: i4-Pac™-5 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 150A I4-PAC-5 |
In Stock171 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS i4-PAC™ |
Package / Case: i4-Pac™-5 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 0.25A TO-220 |
In Stock340 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 133pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 0.25A TO-252 |
In Stock294 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 133pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 5A ISOPLUS220 |
In Stock100 More on Order |
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Series: PolarHV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A ISOPLUS220 |
In Stock137 More on Order |
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Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 7A ISOPLUS220 |
In Stock342 More on Order |
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Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 930mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 8A ISOPLUS220 |
In Stock435 More on Order |
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Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 9A ISOPLUS220 |
In Stock474 More on Order |
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Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A ISOPLUS220 |
In Stock440 More on Order |
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Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 166W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 24A ISOPLUS220 |
In Stock118 More on Order |
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Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 100W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 35A ISOPLUS220 |
In Stock417 More on Order |
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Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 42A ISPLUS220 |
In Stock200 More on Order |
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Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 48A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |