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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 761/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A TO-220 |
In Stock333 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 139W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 [K] |
Package / Case: TO-220-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 23A T-MAX |
In Stock499 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 565W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A T-MAX |
In Stock468 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A T-MAX |
In Stock300 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ |
Package / Case: TO-247-3 Variant |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-220 |
In Stock460 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 680µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 156W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 [K] |
Package / Case: TO-220-3 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A SOT-227 |
In Stock118 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 365nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9480pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 690AW (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 3.5A TO-220 |
In Stock150 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 [K] |
Package / Case: TO-220-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO-220 |
In Stock235 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 [K] |
Package / Case: TO-220-3 |
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 13A TO-247 |
In Stock180 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 335W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1400V 23A SOT-227 |
In Stock235 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1400V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 500mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 820nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 694W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 15A TO-220 |
In Stock488 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 390mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 223W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 [K] |
Package / Case: TO-220-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO-247 |
In Stock386 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A TO-247 |
In Stock124 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A D3PAK |
In Stock284 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247 |
In Stock168 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 112A SOT-227 |
In Stock279 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 112A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 100A T-MAX |
In Stock149 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 100A T-MAX |
In Stock485 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 67A TO-247 |
In Stock472 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 67A D3PAK |
In Stock316 More on Order |
|
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3 [S] |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.7A TO-247 |
In Stock197 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.7A D3PAK |
In Stock299 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 23A T-MAX |
In Stock343 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 23A TO264 |
In Stock266 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 [L] |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23A TO-247 |
In Stock459 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 415W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 27A TO-264 |
In Stock335 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 [L] |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A TO-247 |
In Stock180 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5575pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 30A TO264 |
In Stock151 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 76A T-MAX |
In Stock351 More on Order |
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Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 48A D3PAK |
In Stock233 More on Order |
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Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3 [S] |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |