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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 775/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.8A 1206-8 |
In Stock497 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 5.9A 1206-8 |
In Stock299 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 12A PPAK CHIPFET |
In Stock314 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A PPAK CHIPFET |
In Stock279 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 12A PPAK CHIPFET |
In Stock206 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A PPAK CHIPFET |
In Stock375 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A PPAK CHIPFET |
In Stock358 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.6A, 4.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 12A PPAK CHIPFET |
In Stock191 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Single |
Package / Case: PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A PPAK CHIPFET |
In Stock424 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9) |
Package / Case: 8-PowerVDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 6A 1206-8 |
In Stock463 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V |
Vgs (Max): ±5V |
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.7A 1206-8 |
In Stock248 More on Order |
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Series: LITTLE FOOT® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.7A 1206-8 |
In Stock490 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.4A 1206-8 |
In Stock358 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A PPAK CHIPFET |
In Stock183 More on Order |
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Series: LITTLE FOOT® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Dual |
Package / Case: PowerPAK® ChipFET™ Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A PPAK CHIPFET |
In Stock446 More on Order |
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Series: LITTLE FOOT® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® ChipFet Dual |
Package / Case: PowerPAK® ChipFET™ Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.8A 8-TSSOP |
In Stock430 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4A 8-TSSOP |
In Stock233 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.05W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.7A 8-TSSOP |
In Stock310 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.05W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.2A 8-TSSOP |
In Stock454 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.2A 8-TSSOP |
In Stock273 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.05W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6.8A 8-TSSOP |
In Stock486 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id: 850mV @ 450µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.05W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 8V 35A 1212-8 |
In Stock209 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 4V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 52W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9.8A 1212-8 |
In Stock371 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15.3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6.3A 1212-8 |
In Stock182 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 30A PPAK SO-8 |
In Stock457 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 5W (Ta), 39W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A PPAK SO-8 |
In Stock428 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 19.7A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 5.4W (Ta), 96W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 11A PPAK SO-8 |
In Stock334 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 13A PPAK SO-8 |
In Stock416 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.7W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A PPAK SO-8 |
In Stock235 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8 |
In Stock360 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |