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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 791/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V SOT23F-3 |
In Stock403 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 137mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 28Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23F |
Package / Case: SOT-23-3 Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 24A POWER56 |
In Stock343 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3940pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 78W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 20A D-PAK |
In Stock431 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2315pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 16.5A D-PAK |
In Stock329 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO-220SIS |
In Stock115 More on Order |
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Series: DTMOSII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220SIS |
Package / Case: TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A VS-6 |
In Stock478 More on Order |
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Series: U-MOSIII-H |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: VS-6 (2.9x2.8) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 79A TO-262 |
In Stock482 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO-262 |
In Stock341 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO-262 |
In Stock291 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 231W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 97A D2PAK |
In Stock452 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 97A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 230W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 62A TO-262 |
In Stock223 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 88A TO-262 |
In Stock250 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 56A I-PAK |
In Stock322 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 42A I-PAK |
In Stock294 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 42A I-PAK |
In Stock108 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 43A I-PAK |
In Stock349 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 71W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A I-PAK |
In Stock150 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 140W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 65A I-PAK |
In Stock236 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: I-PAK (LF701) |
Package / Case: TO-252-4, DPak (3 Leads + Tab) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A POWER33 |
In Stock249 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta), 18W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V .1A S-MINI-3P |
In Stock190 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±7V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SMini3-F2 |
Package / Case: SC-85 |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V .1A SS-MINI-3P |
In Stock468 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±7V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 125mW (Ta) |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SMini3-F2 |
Package / Case: SC-89, SOT-490 |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V .1A SSS-MINI-3P |
In Stock468 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±7V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 100mW (Ta) |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SSSMini3-F2 |
Package / Case: SOT-723 |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 100MA SMINI-3 |
In Stock313 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 50Ohm @ 20mA, 5V |
Vgs(th) (Max) @ Id: 3.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): 8V |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SMini3-F2 |
Package / Case: SC-85 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A SOT-227 |
In Stock123 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 95A SP1 |
In Stock445 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 462W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 72A SP1 |
In Stock388 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 416W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 72A SP1 |
In Stock218 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 416W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 28A SP1 |
In Stock162 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 277W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 28A SP1 |
In Stock242 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 277W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 40A SP1 |
In Stock204 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 657W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |