FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 792/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APTM100DA40T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SP1	In Stock284 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V	FET Feature: -	Power Dissipation (Max): 357W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM100SK18TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 43A SP4	In Stock299 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM100SK40T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SP1	In Stock238 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V	FET Feature: -	Power Dissipation (Max): 357W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM100SKM90G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 78A SP6	In Stock192 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 78A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V	FET Feature: -	Power Dissipation (Max): 1250W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM100U13SG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 65A J3	In Stock488 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 65A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V	FET Feature: -	Power Dissipation (Max): 1250W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: Module	Package / Case: J3 Module
APTM120DA15G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 60A SP6	In Stock354 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V	FET Feature: -	Power Dissipation (Max): 1250W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM120DA29TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 34A SP4	In Stock408 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM120DA56T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A SP1	In Stock177 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V	FET Feature: -	Power Dissipation (Max): 390W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM120DA68T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 15A SP1	In Stock429 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 816mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V	FET Feature: -	Power Dissipation (Max): 357W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM120SK15G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 60A SP6	In Stock123 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V	FET Feature: -	Power Dissipation (Max): 1250W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM120SK29TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 34A SP4	In Stock249 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM120SK56T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A SP1	In Stock491 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V	FET Feature: -	Power Dissipation (Max): 390W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM120SK68T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 15A SP1	In Stock426 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 816mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V	FET Feature: -	Power Dissipation (Max): 357W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTM120U10DAG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 116A SP6	In Stock372 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V	Vgs(th) (Max) @ Id: 5V @ 20mA	Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V	FET Feature: -	Power Dissipation (Max): 3290W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM120UM95FAG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 103A SP6	In Stock369 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 103A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 15mA	Gate Charge (Qg) (Max) @ Vgs: 1122nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 30900pF @ 25V	FET Feature: -	Power Dissipation (Max): 2272W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM20DAM10TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 175A SP4	In Stock146 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 175A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM20SKM05G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 317A SP6	In Stock156 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 317A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1136W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP6	Package / Case: SP6
APTM20SKM10TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 175A SP4	In Stock487 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 175A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM20UM05SG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 317A J3	In Stock225 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 317A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1136W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: Module	Package / Case: J3 Module
APTM20UM09SG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 195A J3	In Stock325 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 195A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: Module	Package / Case: J3 Module
APTM50DAM35TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 99A SP4	In Stock412 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 99A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V	FET Feature: -	Power Dissipation (Max): 781W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM50DAM38CTG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4	In Stock188 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM50DAM38TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4	In Stock403 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM50SKM35TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 99A SP4	In Stock446 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 99A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V	FET Feature: -	Power Dissipation (Max): 781W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM50SKM38TG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4	In Stock367 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP4	Package / Case: SP4
APTM50UM19SG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 163A J3	In Stock332 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 163A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 19mOhm @ 81.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1136W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: Module	Package / Case: J3 Module
APTM50UM25SG	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 149A J3	In Stock397 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 149A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 74.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 25V	FET Feature: -	Power Dissipation (Max): 1250W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: Module	Package / Case: J3 Module
FDP8878	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A TO-220AB	In Stock416 More on Order	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V	FET Feature: -	Power Dissipation (Max): 40.5W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
FDD8444-F085	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 145A DPAK	In Stock333 More on Order	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 145A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 25V	FET Feature: -	Power Dissipation (Max): 153W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDS5682	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.5A 8-SOIC	In Stock144 More on Order	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)

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