FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 870/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NP55N055SDG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 55A TO-252	In Stock333 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta), 77W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252 (MP-3ZK)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NP55N055SUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 55A TO-252	In Stock355 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta), 77W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252 (MP-3ZK)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NP60N03KUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A TO-263	In Stock457 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 88W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP60N04KUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 60A TO-263	In Stock476 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.1mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 88W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP60N04MUG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 60A TO-220	In Stock239 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 88W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
NP60N055KUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 60A TO-263	In Stock202 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 88W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP70N10KUF-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70A TO-263	In Stock174 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 3.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP80N04KHE-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TO-263	In Stock212 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP80N055KLE-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A TO-263	In Stock415 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP80N055MHE-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A TO-220	In Stock134 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NP80N055NDG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A TO-262	In Stock323 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 115W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
NP80N06MLG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO-220	In Stock253 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.6mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 115W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NP82N04NUG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 82A TO-262	In Stock391 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 82A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 143W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
NP82N04PDG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 82A TO-263	In Stock499 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 82A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 143W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP84N075KUE-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 84A TO-263	In Stock230 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 84A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 42A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 200W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP88N04NUG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 88A TO-262	In Stock419 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 88A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 200W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
NP88N055KUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 88A TO-263	In Stock386 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 88A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.9mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 200W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP88N075KUE-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 88A TO-263	In Stock334 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 88A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 288W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP88N075MUE-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 88A TO-220	In Stock266 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 88A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 288W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NP90N04MUG-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO-263	In Stock215 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 217W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
PMN20EN,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6TSOP	In Stock252 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V	FET Feature: -	Power Dissipation (Max): 545mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SC-74, SOT-457
DMN3029LFG-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.3A PWRDI333-8	In Stock233 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMN62D0LFB-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100MA 3-DFN	In Stock258 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V	FET Feature: -	Power Dissipation (Max): 470mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-X1DFN1006	Package / Case: 3-UFDFN
DMP58D0LFB-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 180MA 3-DFN	In Stock389 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V	Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V	FET Feature: -	Power Dissipation (Max): 470mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-X1DFN1006	Package / Case: 3-UFDFN
TK16A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 16A TO-220SIS	In Stock498 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 16A	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
TK16A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 16A TO-220SIS	In Stock321 More on Order	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 550V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
TK20A25D,S5Q(M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A TO-220SIS	In Stock349 More on Order	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
TK40P03M1(T6RDS-Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A DPAK-3	In Stock269 More on Order	Series: U-MOSVI-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK40S10K3Z(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A DPAK-3	In Stock330 More on Order	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V	FET Feature: -	Power Dissipation (Max): 93W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK45P03M1,RQ(S	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 45A DPAK-3	In Stock263 More on Order	Series: U-MOSVI-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.7mOhm @ 22.5A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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