Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FETs, MOSFETs - Single

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 880/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NTDV20N06LT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

In Stock390

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV20N06T4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

In Stock254

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV2955-1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 12A IPAK

In Stock159

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
NTDV2955PT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 12A DPAK

In Stock376

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV3055L104-1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 12A IPAK

In Stock461

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
NTDV5804NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 69A DPAK

In Stock398

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV5805NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 51A DPAK

In Stock499

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV6414ANT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 32A DPAK

In Stock346

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4922NET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 147A SO8-FL

In Stock236

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 76.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
FET Feature: -
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4925NET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 48A SO8-FL

In Stock101

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 23.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4926NET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 44A SO8-FL

In Stock406

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NVB5405NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 16.5A D2PAK

In Stock317

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB5426NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A D2PAK

In Stock451

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB60N06T4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V D2PAK

In Stock239

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVD5413NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 30A DPAK

In Stock221

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5862NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 90A DPAK-4

In Stock391

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
FET Feature: -
Power Dissipation (Max): 4.1W (Ta), 115W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVD6415ANLT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 23A DPAK-4

In Stock230

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1024pF @ 25V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVF2955PT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P CH 60V 1.7A SOT223

In Stock303

More on Order

Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
NVMS4816NR2G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9A 8-SOIC

In Stock254

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
NVMSD6N303R2G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 6A 8SOIC

In Stock369

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
NVTE4151PT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.76A SC-89

In Stock100

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
NVTJD4105CT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET 20V 0.63A SC-88

In Stock255

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
NVTJD4158CT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.88A SC-88

In Stock254

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
NVTJD4401NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.63A SC-88

In Stock108

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
NVTS4409NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V/8V 0.075A SC-70

In Stock457

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SBVS138LT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.2A SOT-23

In Stock206

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
STD12N10T4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH SPCL 100V DPAK

In Stock151

More on Order

Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
STD24N06LT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

In Stock403

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD25P03LT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V DPAK

In Stock330

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD5407NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 7.6A DPAK

In Stock172

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 32V
FET Feature: -
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63