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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 881/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43A TO220AB |
In Stock124 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 47W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB Full-Pak |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 20V 28A PQFN 5X6 MM |
In Stock209 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 25V 19A DIRECTFET |
In Stock436 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 32W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ SQ |
Package / Case: DirectFET™ Isometric SQ |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 32A DIRECTFET |
In Stock377 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 4160pF @ 13V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 2.1W (Ta), 54W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MX |
Package / Case: DirectFET™ Isometric MX |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 35A DIRECTFET |
In Stock264 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 213A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 13V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 2.1W (Ta), 78W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MX |
Package / Case: DirectFET™ Isometric MX |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 23A DIRECTFET |
In Stock392 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 2.1W (Ta), 75W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MX |
Package / Case: DirectFET™ Isometric MX |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT89 |
In Stock171 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V SOT89 |
In Stock324 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 10Ohm @ 220mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V SOT89 |
In Stock256 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 350V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V SOT89 |
In Stock131 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 350V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V SOT89 |
In Stock135 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 350V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 26A SOT227 |
In Stock123 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 116A SP6 |
In Stock427 More on Order |
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Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 116A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: 5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: SP6 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 228A D2PAK |
In Stock265 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 228A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 253nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 181A D2PAK |
In Stock101 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 181A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 253nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3A SOT23 |
In Stock491 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 62mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3L |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 3.1A 8SOIC |
In Stock312 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 37.5V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 10A 8SOIC |
In Stock195 More on Order |
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Series: SDMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 7A 8SOIC |
In Stock325 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 6.5A 8SOIC |
In Stock342 More on Order |
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Series: SDMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 8SOIC |
In Stock479 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.7W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16A 8SOIC |
In Stock265 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A 8SOIC |
In Stock483 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8SOIC |
In Stock402 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.7A SC70-3 |
In Stock351 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 470mOhm @ 700mA, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70-3 |
Package / Case: SC-70, SOT-323 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8.2A TO263 |
In Stock410 More on Order |
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Series: SDMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 2.6W (Ta), 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 21A TO263 |
In Stock473 More on Order |
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Series: SDMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.5W (Ta), 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7A TO263 |
In Stock108 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 100W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A TO252 |
In Stock472 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A TO252 |
In Stock406 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 62W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |