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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 940/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 80A TO220-3 |
In Stock150 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO220-3 |
In Stock230 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 58µA |
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 115W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO220-3 |
In Stock337 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 58µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 115W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 |
In Stock389 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 214W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A TO220-3 |
In Stock158 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 188W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220-3 |
In Stock318 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 155µA |
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 214W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 |
In Stock315 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 118µA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 188W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 |
In Stock235 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 275µA |
Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 |
In Stock433 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 196µA |
Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET COOL MOS SAWED WAFER |
In Stock224 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16.8A 3TO263 |
In Stock300 More on Order |
|
Series: CoolMOS™ P6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 530µA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 126W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.6A CPH3 |
In Stock177 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 303mOhm @ 800mA, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 900mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3A MCPH3 |
In Stock184 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70FL/MCPH3 |
Package / Case: 3-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.5A MCPH6 |
In Stock350 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 98mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88FL/MCPH6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2A MCPH6 |
In Stock248 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88FL/MCPH6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.5A MCPH6 |
In Stock121 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88FL/MCPH6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 35V 2.5A MCPH6 |
In Stock449 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 98mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88FL/MCPH6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3A SCH6 |
In Stock187 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 84mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-563/SCH6 |
Package / Case: SOT-563, SOT-666 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2A SOT563 |
In Stock392 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-563/SCH6 |
Package / Case: SOT-563, SOT-666 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2A SCH6 |
In Stock292 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-563/SCH6 |
Package / Case: SOT-563, SOT-666 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 35V 3A CPH3 |
In Stock276 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70A TO220-3 |
In Stock306 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 70A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V |
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 35A, 15V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 72W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V TO220-3 |
In Stock436 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 2V @ 45µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 94W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V TO220-3 |
In Stock117 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 550V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-220AB |
In Stock308 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-220AB |
In Stock382 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 651V 800V TO251 |
In Stock354 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 41W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251 |
Package / Case: TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 4.6A TO251 |
In Stock482 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 41W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251 |
Package / Case: TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23 |
In Stock158 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V DPAK |
In Stock378 More on Order |
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Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |