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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 21/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC30UPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 23A 100W TO220AB

In Stock1,886

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 100W
Switching Energy: 160µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 17ns/78ns
Test Condition: 480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRG4BC30WPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 23A 100W TO220AB

In Stock1,662

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IKP20N65H5XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT TRENCH 650V 42A TO220-3

In Stock755

More on Order

Series: TrenchStop™
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 125W
Switching Energy: 170µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: 18ns/156ns
Test Condition: 400V, 10A, 32Ohm, 15V
Reverse Recovery Time (trr): 52ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
STGF20NB60S
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 24A 40W TO220FP

In Stock2,066

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 70A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 40W
Switching Energy: 840µJ (on), 7.4mJ (off)
Input Type: Standard
Gate Charge: 83nC
Td (on/off) @ 25°C: 92ns/1.1µs
Test Condition: 480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
IKP30N65H5XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT TRENCH 650V 55A TO220-3

In Stock336

More on Order

Series: TrenchStop™
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 188W
Switching Energy: 280µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 19ns/177ns
Test Condition: 400V, 15A, 23Ohm, 15V
Reverse Recovery Time (trr): 51ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
IXXH30N65B4
IXYS

Transistors - IGBTs - Single

IGBT 650V 65A 230W TO247AD

In Stock374

More on Order

Series: GenX4™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 146A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 230W
Switching Energy: 1.55mJ (on), 480µJ (off)
Input Type: Standard
Gate Charge: 52nC
Td (on/off) @ 25°C: 32ns/170ns
Test Condition: 400V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)
IXGP20N120A3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 40A 180W TO220

In Stock462

More on Order

Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 180W
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 16ns/290ns
Test Condition: 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IGW50N60H3FKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 100A 333W TO247-3

In Stock555

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.36mJ
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 23ns/235ns
Test Condition: 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
IXGP30N120B3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO220

In Stock350

More on Order

Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Power - Max: 300W
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 87nC
Td (on/off) @ 25°C: 16ns/127ns
Test Condition: 960V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IXGA30N120B3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO263

In Stock266

More on Order

Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Power - Max: 300W
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 87nC
Td (on/off) @ 25°C: 16ns/127ns
Test Condition: 960V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)
IRG4PH20KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 11A 60W TO247AC

In Stock311

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 620µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 50ns/100ns
Test Condition: 800V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr): 51ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IGW40T120FKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 75A 270W TO247-3

In Stock550

More on Order

Series: TrenchStop®
IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 270W
Switching Energy: 6.5mJ
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 48ns/480ns
Test Condition: 600V, 40A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
IRG4PH30KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 20A 100W TO247AC

In Stock346

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Power - Max: 100W
Switching Energy: 950µJ (on), 1.15mJ (off)
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 39ns/220ns
Test Condition: 800V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IGW75N60TFKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 150A 428W TO247-3

In Stock287

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 428W
Switching Energy: 4.5mJ
Input Type: Standard
Gate Charge: 470nC
Td (on/off) @ 25°C: 33ns/330ns
Test Condition: 400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
APT35GA90BD15
Microsemi

Transistors - IGBTs - Single

IGBT 900V 63A 290W TO247

In Stock501

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 63A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Power - Max: 290W
Switching Energy: 642µJ (on), 382µJ (off)
Input Type: Standard
Gate Charge: 84nC
Td (on/off) @ 25°C: 12ns/104ns
Test Condition: 600V, 18A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXGT32N120A3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 75A 300W TO268

In Stock344

More on Order

Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 230A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Power - Max: 300W
Switching Energy: -
Input Type: Standard
Gate Charge: 89nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
IXXH60N65B4H1
IXYS

Transistors - IGBTs - Single

IGBT 650V 116A 380W TO247AD

In Stock482

More on Order

Series: GenX4™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 116A
Current - Collector Pulsed (Icm): 230A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Power - Max: 380W
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 37ns/145ns
Test Condition: 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)
IXYH10N170C
IXYS

Transistors - IGBTs - Single

IGBT 1.7KV 36A TO247

In Stock509

More on Order

Series: XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 84A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Power - Max: 280W
Switching Energy: 1.4mJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 46nC
Td (on/off) @ 25°C: 14ns/130ns
Test Condition: 850V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr): 17ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)
IXYH16N170C
IXYS

Transistors - IGBTs - Single

IGBT 1.7KV 40A TO247

In Stock426

More on Order

Series: XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Power - Max: 310W
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 56nC
Td (on/off) @ 25°C: 11ns/140ns
Test Condition: 850V, 16A, 10Ohm, 15V
Reverse Recovery Time (trr): 19ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)
APT40GR120B
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 88A 500W TO247

In Stock471

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 88A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Power - Max: 500W
Switching Energy: 1.38mJ (on), 906µJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 22ns/163ns
Test Condition: 600V, 40A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
APT25GT120BRDQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 54A 347W TO247

In Stock454

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Power - Max: 347W
Switching Energy: 930µJ (on), 720µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 14ns/150ns
Test Condition: 800V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT35GN120BG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 94A 379W TO247

In Stock252

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Series: -
IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 94A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Power - Max: 379W
Switching Energy: 2.315mJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 24ns/300ns
Test Condition: 800V, 35A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXYH20N120C3D1
IXYS

Transistors - IGBTs - Single

IGBT 1200V 36A 230W TO-247AD

In Stock444

More on Order

Series: GenX3™, XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 88A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Power - Max: 230W
Switching Energy: 1.3mJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 20ns/90ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 195ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)
IXYH24N170C
IXYS

Transistors - IGBTs - Single

IGBT 1.7KV 58A TO247-3

In Stock346

More on Order

Series: XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 58A
Current - Collector Pulsed (Icm): 145A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Power - Max: 500W
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Input Type: Standard
Gate Charge: 96nC
Td (on/off) @ 25°C: 12ns/160ns
Test Condition: 960V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
APT80GA90B
Microsemi

Transistors - IGBTs - Single

IGBT 900V 145A 625W TO247

In Stock589

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 145A
Current - Collector Pulsed (Icm): 239A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Power - Max: 625W
Switching Energy: 1652µJ (on), 1389µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 18ns/149ns
Test Condition: 600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXYH75N65C3H1
IXYS

Transistors - IGBTs - Single

IGBT 650V 170A 750W TO247

In Stock247

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Series: GenX3™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 170A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Power - Max: 750W
Switching Energy: 2.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 123nC
Td (on/off) @ 25°C: 27ns/93ns
Test Condition: 400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)
IXBT16N170A
IXYS

Transistors - IGBTs - Single

IGBT 1700V 16A 150W TO268

In Stock387

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Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Power - Max: 150W
Switching Energy: 1.2mJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 15ns/160ns
Test Condition: 1360V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr): 360ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
APT100GN60LDQ4G
Microsemi

Transistors - IGBTs - Single

IGBT 600V 229A 625W TO264

In Stock439

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 229A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Power - Max: 625W
Switching Energy: 4.75mJ (on), 2.675mJ (off)
Input Type: Standard
Gate Charge: 600nC
Td (on/off) @ 25°C: 31ns/310ns
Test Condition: 400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
IXXK200N65B4
IXYS

Transistors - IGBTs - Single

IGBT 650V 370A 1150W TO264

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Series: GenX4™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 370A
Current - Collector Pulsed (Icm): 1000A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Power - Max: 1150W
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 553nC
Td (on/off) @ 25°C: 62ns/245ns
Test Condition: 400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXXK)
APT45GP120B2DQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 113A 625W TMAX

In Stock479

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Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 113A
Current - Collector Pulsed (Icm): 170A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Power - Max: 625W
Switching Energy: 900µJ (on), 905µJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 18ns/100ns
Test Condition: 600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -