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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 23/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGW40N65H5FKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 74A 255W PG-TO247-3

In Stock476

More on Order

Series: TrenchStop®
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 255W
Switching Energy: 390µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 22ns/165ns
Test Condition: 400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
IKW40N65WR5XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT TRENCH 650V 80A TO247-3

In Stock382

More on Order

Series: TrenchStop™
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Power - Max: 230W
Switching Energy: 770µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 193nC
Td (on/off) @ 25°C: 42ns/432ns
Test Condition: 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr): 112ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
IGW50N65F5FKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 80A 305W PG-TO247-3

In Stock488

More on Order

Series: TrenchStop®
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 305W
Switching Energy: 490µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 21ns/175ns
Test Condition: 400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
APT45GR65B
Microsemi

Transistors - IGBTs - Single

IGBT 650V 92A 357W TO-247

In Stock294

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 92A
Current - Collector Pulsed (Icm): 168A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Power - Max: 357W
Switching Energy: 900µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 15ns/100ns
Test Condition: 433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
APT36GA60B
Microsemi

Transistors - IGBTs - Single

IGBT 600V 65A 290W TO-247

In Stock442

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 109A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 290W
Switching Energy: 307µJ (on), 254µJ (off)
Input Type: Standard
Gate Charge: 102nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
FGA30N120FTDTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 60A 339W TO3P

In Stock521

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 339W
Switching Energy: -
Input Type: Standard
Gate Charge: 208nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 730ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
APT50GT60BRG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 110A 446W TO247

In Stock246

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 110A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: 446W
Switching Energy: 995µJ (on), 1070µJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 14ns/240ns
Test Condition: 400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT20GT60BRDQ1G
Microsemi

Transistors - IGBTs - Single

IGBT 600V 43A 174W TO247

In Stock310

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 43A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 174W
Switching Energy: 215µJ (on), 245µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 8ns/80ns
Test Condition: 400V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT43GA90B
Microsemi

Transistors - IGBTs - Single

IGBT 900V 78A 337W TO-247

In Stock328

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 129A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Power - Max: 337W
Switching Energy: 875µJ (on), 425µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 12ns/82ns
Test Condition: 600V, 25A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT30GS60BRDQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 600V 54A 250W SOT227

In Stock467

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 113A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Power - Max: 250W
Switching Energy: 570µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 16ns/360ns
Test Condition: 400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT43GA90BD30
Microsemi

Transistors - IGBTs - Single

IGBT 900V 78A 337W TO247

In Stock516

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 129A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Power - Max: 337W
Switching Energy: 875µJ (on), 425µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 12ns/82ns
Test Condition: 600V, 25A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IRGP4660DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 100A 330W TO247AC

In Stock389

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Power - Max: 330W
Switching Energy: 625µJ (on), 1.28mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 60ns/145ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): 115ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGP4660D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 100A 330W TO247AD

In Stock529

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Power - Max: 330W
Switching Energy: 625µJ (on), 1.28mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 60ns/145ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): 115ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
APT95GR65B2
Microsemi

Transistors - IGBTs - Single

IGBT 650V 208A 892W T-MAX

In Stock312

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 208A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
Power - Max: 892W
Switching Energy: 3.12mJ (on), 2.55mJ (off)
Input Type: Standard
Gate Charge: 420nC
Td (on/off) @ 25°C: 29ns/226ns
Test Condition: 433V, 95A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX™ [B2]
APT50GF120LRG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 135A 781W TO264

In Stock567

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Power - Max: 781W
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Input Type: Standard
Gate Charge: 340nC
Td (on/off) @ 25°C: 25ns/260ns
Test Condition: 800V, 50A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
RGT8NL65DGTL
Rohm Semiconductor

Transistors - IGBTs - Single

FIELD STOP TRENCH IGBT

In Stock1,680

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Power - Max: 65W
Switching Energy: -
Input Type: Standard
Gate Charge: 13.5nC
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
NGB8207BNT4G
Littelfuse

Transistors - IGBTs - Single

IGBT 365V 20A 165W D2PAK3

In Stock1,779

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 365V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 4V, 20A
Power - Max: 165W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
RGT16NL65DGTL
Rohm Semiconductor

Transistors - IGBTs - Single

FIELD STOP TRENCH IGBT

In Stock1,794

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Power - Max: 94W
Switching Energy: -
Input Type: Standard
Gate Charge: 21nC
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
IGB20N60H3ATMA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A 170W TO263-3

In Stock2,255

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: 170W
Switching Energy: 690µJ
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 16ns/194ns
Test Condition: 400V, 20A, 14.6Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
RGT30NL65DGTL
Rohm Semiconductor

Transistors - IGBTs - Single

FIELD STOP TRENCH IGBT

In Stock2,109

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 133W
Switching Energy: -
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 55ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
HGTP7N60A4
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 34A 125W TO220AB

In Stock1,595

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Power - Max: 125W
Switching Energy: 55µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 11ns/100ns
Test Condition: 390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
RGT50NS65DGTL
Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

In Stock1,666

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Power - Max: 194W
Switching Energy: -
Input Type: Standard
Gate Charge: 49nC
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 58ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
RGT50NL65DGTL
Rohm Semiconductor

Transistors - IGBTs - Single

FIELD STOP TRENCH IGBT

In Stock1,731

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Power - Max: 194W
Switching Energy: -
Input Type: Standard
Gate Charge: 49nC
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 58ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
FGP5N60LS
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 10A 83W TO220

In Stock1,678

More on Order

Series: -
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 36A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 12V, 14A
Power - Max: 83W
Switching Energy: 38µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 18.3nC
Td (on/off) @ 25°C: 4.3ns/36ns
Test Condition: 400V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
IKA08N65ET6XKSA1
Infineon Technologies

Transistors - IGBTs - Single

HOME APPLIANCES 14

In Stock521

More on Order

Series: TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 25A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Power - Max: 33W
Switching Energy: 110µJ (on), 40µJ (off)
Input Type: Standard
Gate Charge: 17nC
Td (on/off) @ 25°C: 20ns/59ns
Test Condition: 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr): 43ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3 Full Pack
RGT8NS65DGC9
Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

In Stock2,184

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Power - Max: 65W
Switching Energy: -
Input Type: Standard
Gate Charge: 13.5nC
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
IKA10N65ET6XKSA2
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 15A TO220-3

In Stock498

More on Order

Series: TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 42.5A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Power - Max: 40W
Switching Energy: 200µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 30ns/106ns
Test Condition: 400V, 8.5A, 47Ohm, 15V
Reverse Recovery Time (trr): 51ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3 Full Pack
SGP10N60RUFDTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 16A 75W TO220

In Stock1,758

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Power - Max: 75W
Switching Energy: 141µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 15ns/36ns
Test Condition: 300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
STGP10NB60S
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 29A 80W TO220

In Stock2,430

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 29A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Power - Max: 80W
Switching Energy: 600µJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 700ns/1.2µs
Test Condition: 480V, 10A, 1kOhm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
FGA15S125P
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1250V 30A 136W TO3PN

In Stock697

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1250V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
Power - Max: 136W
Switching Energy: -
Input Type: Standard
Gate Charge: 129nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P