Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Voltage | Power Dissipation (Max) | Voltage - Output | Voltage - Offset (Vt) | Current - Gate to Anode Leakage (Igao) | Current - Valley (Iv) | Current - Peak | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock26,446 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 |
In Stock1,420 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 |
In Stock163 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock183 More on Order |
|
Series: * |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: - |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): - |
Current - Peak: - |
Package / Case: - |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock456 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock164 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock459 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock412 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction TRANS PROG UNIJUNCT 40V TO92 |
In Stock402 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock279 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock259 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock346 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock337 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock213 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock170 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock374 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock318 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock386 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock252 More on Order |
|
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock364 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 18mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock220 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 3V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock262 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 5V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 4mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock346 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 6mA |
Current - Peak: 400nA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock386 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock407 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 3V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 1µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock109 More on Order |
|
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 1V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 400nA |
Package / Case: TO-206AA, TO-18-3 Metal Can |