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BSP613PL6327HUSA1

BSP613PL6327HUSA1
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For Reference Only

Part Number BSP613PL6327HUSA1
OEMstron Part # BSP613PL6327HUSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V 2.9A SOT-223
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSP613PL6327HUSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSP613PL6327HUSA1 Specifications

Part Number BSP613PL6327HUSA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

BSP613PL6327HUSA1 Documents

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Part Number Description Stock

BSP613PL6327HUSA1

D# BSP613PL6327HUSA1TR-ND

Infineon Technologies AG

MOSFET P-CH 60V 2.9A SOT223-4

Limited Supply - Call
Part Number Description Stock

BSP613PL6327HUSA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

11500
Part Number Description Stock

BSP613PL6327HUSA1

Infineon Technologies AG

OEM/CM ONLY

10516

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