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| Part Number | IPC302N08N3X1SA1 |
| OEMstron Part # | IPC302N08N3X1SA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 80V 1A SAWN ON FOIL |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPC302N08N3X1SA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPC302N08N3X1SA1 Specifications
| Part Number | IPC302N08N3X1SA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Sawn on foil | |
| Package / Case | Die |
IPC302N08N3X1SA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPC302N08N3X1SA1 D# IPC302N08N3X1SA1 Infineon Technologies AG |
Trans MOSFET N-CH 80V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC302N08N3X1SA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
IPC302N08N3X1SA1 Infineon Technologies AG |
RoHS: Compliant
pbFree: Yes
|
0 |
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| In Stock | 360 - More on Order |
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| Minimum | 1 |
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