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IRFW630BTM-FP001

IRFW630BTM-FP001
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For Reference Only

Part Number IRFW630BTM-FP001
OEMstron Part # IRFW630BTM-FP001
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 9A D2PAK
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models IRFW630BTM-FP001 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Feb 25 - Mar 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IRFW630BTM-FP001 Specifications

Part Number IRFW630BTM-FP001
Brand ON Semiconductor
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFW630BTM-FP001 Documents

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1$ 0.6538$ 0.6538
100$ 0.6538$ 65.3800
500$ 0.6538$ 326.9000
1000$ 0.6538$ 653.8000
2500$ 0.6538$ 1,634.5000

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