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| Part Number | IXTD3N60P-2J |
| OEMstron Part # | IXTD3N60P-2J |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 600 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXTD3N60P-2J PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXTD3N60P-2J Specifications
| Part Number | IXTD3N60P-2J | |
| Brand | IXYS | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | PolarHV™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA | |
| Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 411pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 70W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Die | |
| Package / Case | Die |
IXTD3N60P-2J Documents
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| In Stock | 500 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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