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For Reference Only
| Part Number | SI8465DB-T2-E1 |
| OEMstron Part # | SI8465DB-T2-E1 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V MICROFOOT |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI8465DB-T2-E1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI8465DB-T2-E1 Specifications
| Part Number | SI8465DB-T2-E1 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 4-Microfoot | |
| Package / Case | 4-XFBGA, CSPBGA |
SI8465DB-T2-E1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
SI8465DB-T2-E1 D# SI8465DB-T2-E1 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 2.5A 4-Pin SMD T/R - Tape and Reel (Alt: SI8465DB-T2-E1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SI8465DB-T2-E1 Vishay Siliconix |
P CHANNEL MOSFET, -20V, 3.8A, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.8A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):104mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1.5V, No. of Pins:4 , RoHS Compliant: Yes |
3000 |
| Part Number | Description | Stock |
|
SI8465DB-T2-E1 D# SI8465DB-T2-E1CT-ND Vishay Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
565 In Stock |
| Part Number | Description | Stock |
|
SI8465DBT2E1 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
1190 |
| Part Number | Description | Stock |
|
SI8465DB-T2-E1 D# 35R6250 Vishay Intertechnologies |
P CHANNEL MOSFET, -20V, 3.8A, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.8A, On Resistance Rds(on):0.104ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SI8465DB-T2-E1 D# NS-SI8465DB-T2-E1 Vishay Siliconix |
OEM/CM ONLY |
8506 |
| Part Number | Description | Stock |
|
SI8465DBT2E1 Vishay Siliconix |
OEM/CM ONLY |
1016 |
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