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| Part Number | SSM3J35CT,L3F |
| OEMstron Part # | SSM3J35CT-L3F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CHANNEL 20V 100MA CST3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM3J35CT,L3F PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SSM3J35CT Specifications
| Part Number | SSM3J35CT,L3F | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | π-MOSVI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4V | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 50mA, 4V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 12.2pF @ 3V | |
| FET Feature | - | |
| Power Dissipation (Max) | 100mW (Ta) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | CST3 | |
| Package / Case | SC-101, SOT-883 |
SSM3J35CT,L3F Documents
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