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Page 118/2164

Part Number	Description	In Stock
BFP420H6740XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock329 More on Order
BFP420H6801XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock388 More on Order
BFP450E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock223 More on Order
BFP450E6433BTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock165 More on Order
BFP450H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock139 More on Order
BFP450H6433XTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock294 More on Order
BFP460E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock106 More on Order
BFP460E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock270 More on Order
BFP460H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock4,743 More on Order
BFP460H6433XTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock243 More on Order
BFP520E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 24dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock300 More on Order
BFP 520F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock416 More on Order
BFP520FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock207 More on Order
BFP520H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock230 More on Order
BFP540E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock138 More on Order
BFP540ESDE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock269 More on Order
BFP540ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock4,277 More on Order
BFP 540F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock326 More on Order
BFP540FESDE6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock211 More on Order
BFP540FESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock13,172 More on Order
BFP540H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 16dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock412 More on Order
BFP620E7764BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.8V 65GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21.5dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock495 More on Order
BFP 620F E7764 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.8V 65GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock294 More on Order
BFP620FH7764XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.8V 65GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21dB ~ 10dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock464 More on Order
BFP620H7764XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.8V 65GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21.5dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock3,679 More on Order
BFP640E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock311 More on Order
BFP640ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.6dB ~ 2dB @ 150MHz ~ 10GHz Gain: 7dB ~ 30dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock450 More on Order
BFP640FE6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock223 More on Order
BFP 640FESD E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Gain: 8B ~ 30.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock124 More on Order
BFP640FESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Gain: 8B ~ 30.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock319 More on Order

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