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Transistors

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BFR 193W E6327
BFR 193W E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock494

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BFR193WH6327XTSA1
BFR193WH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock29,378

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BFR340FH6327XTSA1
BFR340FH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
  • Gain: 13dB ~ 28dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
In Stock4,216

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BFR340L3E6327XTMA1
BFR340L3E6327XTMA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock390

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BFR 340T E6327
BFR 340T E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
  • Gain: 15dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
In Stock436

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BFR35APE6327HTSA1
BFR35APE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock243

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BFR 360F E6327
BFR 360F E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: TSFP-3-1
In Stock106

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BFR 360F E6765
BFR 360F E6765

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: TSFP-3-1
In Stock142

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BFR360FH6327XTSA1
BFR360FH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
In Stock105,310

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BFR360FH6765XTSA1
BFR360FH6765XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
In Stock203

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BFR 360L3 E6327
BFR 360L3 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock233

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BFR360L3E6765XTMA1
BFR360L3E6765XTMA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock312

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BFR 360T E6327
BFR 360T E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 13.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
In Stock196

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BFR 380F E6327
BFR 380F E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 9.5dB ~ 13.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: TSFP-3-1
In Stock132

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BFR380FH6327XTSA1
BFR380FH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 9.5dB ~ 13.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
In Stock132

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BFR380L3E6327XTMA1
BFR380L3E6327XTMA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz
  • Gain: 7.5dB ~ 16.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock395

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BFR 380T E6327
BFR 380T E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
In Stock102

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BFR460L3E6327XTMA1
BFR460L3E6327XTMA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.8V 22GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
  • Gain: 16dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock243

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BFR505,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock249

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BFR505T,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SC75

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
In Stock350

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BFR520,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock206

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BFR520,235

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock206

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BFR520T,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SC75

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
In Stock266

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BFR540,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock258

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BFR540,235

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock444

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BFR 705L3RH E6327
BFR 705L3RH E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 39GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 39GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 25dB
  • Power - Max: 40mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock469

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BFR720L3RHE6327XTSA1
BFR720L3RHE6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 45GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock235

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BFR 740L3 E6327
BFR 740L3 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock355

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BFR740L3RHE6327XTSA1
BFR740L3RHE6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock24,097

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BFR750L3RHE6327XTSA1
BFR750L3RHE6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 37GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
  • Gain: 21dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock209

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