Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
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FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
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JFETs (664)
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Special Purpose (162)

Records 64,903

Page 140/2164

Part Number	Description	In Stock
MSC72111H Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock160 More on Order
MSC74070 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock489 More on Order
MSC80205 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock215 More on Order
MSC80806 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock347 More on Order
MSC86580 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock179 More on Order
MSD2714AT1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SC59 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	In Stock357 More on Order
MT3S111P(TE12L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 8GHZ PW-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	In Stock8,247 More on Order
MT3S111(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 11.5GHZ SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 12dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock8,548 More on Order
MT3S111TU,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF SIGE NPN BIPOLAR TRANSISTOR N Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Gain: 12.5dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	In Stock263 More on Order
MT3S113P(TE12L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.3V 7.7GHZ PW-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 7.7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 10.5dB Power - Max: 1.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	In Stock1,851 More on Order
MT3S113(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.3V 12.5GHZ SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 11.8dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock4,762 More on Order
MT3S113TU,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.3V 11.2GHZ UFM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 11.2GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 12.5dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	In Stock4,661 More on Order
MT3S16U(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 4GHZ USM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: 4.5dBi Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock4,574 More on Order
MT3S20P(TE12L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ PW-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	In Stock132 More on Order
MT3S20TU(TE85L) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ UFM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V Gain: 12dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	In Stock283 More on Order
MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF X34 PB-F RADIO-FREQUENCY SIGE HE Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 26.5GHz Noise Figure (dB Typ @ f): 0.55dB @ 2GHz Gain: 16.9dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	In Stock107 More on Order
MX0912B251Y,114 Ampleon	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.215GHZ CDFM2 Manufacturer: Ampleon USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Gain: 7.4dB Power - Max: 690W Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-439A Supplier Device Package: CDFM2	In Stock365 More on Order
MX0912B351Y,114 Ampleon	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.215GHZ CDFM2 Manufacturer: Ampleon USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Gain: 7.6dB Power - Max: 960W Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-439A Supplier Device Package: CDFM2	In Stock400 More on Order
MZ0912B100Y,114 Ampleon	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.215GHZ CDFM2 Manufacturer: Ampleon USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Gain: 7.6dB Power - Max: 290W Current - Collector (Ic) (Max): 6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-443A Supplier Device Package: CDFM2	In Stock357 More on Order
MZ0912B50Y,114 Ampleon	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.215GHZ CDFM2 Manufacturer: Ampleon USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Gain: 8dB Power - Max: 150W Current - Collector (Ic) (Max): 3A Mounting Type: Chassis Mount Package / Case: SOT-443A Supplier Device Package: CDFM2	In Stock426 More on Order
NE202930-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 11GHZ 3SMINMOLD Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.15dB @ 1GHz Gain: 13.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-SuperMiniMold (30 PKG)	In Stock292 More on Order
NE202930-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 11GHZ SOT323 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.15dB @ 1GHz Gain: 13.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	In Stock417 More on Order
NE46134-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock237 More on Order
NE46134-T1 CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock465 More on Order
NE46134-T1-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock388 More on Order
NE46134-T1-QR-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock150 More on Order
NE46134-T1-QS-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock454 More on Order
NE461M02-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock450 More on Order
NE461M02-T1-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V SOT89 Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock122 More on Order
NE461M02-T1-QR-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V Manufacturer: CEL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA	In Stock441 More on Order

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