Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 139/2164

Part Number	Description	In Stock
MS2502W Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock470 More on Order
MS2506 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock310 More on Order
MS2552 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ 2NLFL Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	In Stock295 More on Order
MS2553C Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.15GHZ M220 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 10.5dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	In Stock430 More on Order
MS2554 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock302 More on Order
MS2554A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock460 More on Order
MS2562 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock156 More on Order
MS2563 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock209 More on Order
MS2575A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock282 More on Order
MS2586 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock375 More on Order
MS2587 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock339 More on Order
MS2588 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock175 More on Order
MS2608 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock396 More on Order
MS2870 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock339 More on Order
MS2874 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock178 More on Order
MS3455 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock410 More on Order
MS3456 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock201 More on Order
MS652S Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 512MHZ M123 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Gain: 10dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M123 Supplier Device Package: M123	In Stock426 More on Order
MSC1090M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 65V 1.15GHZ M220 Manufacturer: Microsemi Corporation Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 5.52A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	In Stock419 More on Order
MSC1175M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock493 More on Order
MSC1175MA Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock427 More on Order
MSC1350M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 7dB ~ 7.1dB Power - Max: 720W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 19.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock260 More on Order
MSC1400M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.5dB Power - Max: 1000W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock493 More on Order
MSC1450A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 65V M216 Manufacturer: Microsemi Corporation Voltage - Collector Emitter Breakdown (Max): 65V Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock225 More on Order
MSC1450M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock259 More on Order
MSC2295-BT1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 150MHZ SC59 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	In Stock137 More on Order
MSC2295-CT1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 150MHZ SC59 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	In Stock129 More on Order
MSC2295-CT1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 150MHZ SC59 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	In Stock117 More on Order
MSC3930-BT1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 150MHZ SC70-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	In Stock247 More on Order
MSC3930-BT1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 150MHZ SC70-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	In Stock196 More on Order

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