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Bipolar (BJT) - Arrays (1,432)
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Page 150/2164

Part Number	Description	In Stock
TAN500 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 75V 1.215GHZ 55ST Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 9dB Power - Max: 2500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	In Stock260 More on Order
TAN75A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 1.215GHZ 55AZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 8dB ~ 8.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AZ Supplier Device Package: 55AZ	In Stock419 More on Order
TCS1200 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55TU-1 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Gain: 10.2dBd Power - Max: 2095W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 60A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55TU-1 Supplier Device Package: 55TU-1	In Stock243 More on Order
TCS800 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55SM Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Gain: 8dB ~ 9dB Power - Max: 1944W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	In Stock305 More on Order
TPR1000 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ 55KV Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 6dB Power - Max: 2900W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KV Supplier Device Package: 55KV	In Stock238 More on Order
TPR1000A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 65V 1.09GHZ 55KV Manufacturer: Microsemi Corporation Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 6dB Power - Max: 2900W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 55KV Supplier Device Package: 55KV	In Stock293 More on Order
TPR175 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.09GHZ 55CX Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Gain: 8dB ~ 9dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	In Stock294 More on Order
TPR400 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.09GHZ 55CX Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Gain: 7.27dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	In Stock474 More on Order
TPR700 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ 55KT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Gain: 6.7dB Power - Max: 2050W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 55A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	In Stock159 More on Order
UMIL10 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ 55FT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 100MHz ~ 400MHz Gain: 10dB Power - Max: 28W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	In Stock457 More on Order
UMIL100A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 31V 400MHZ 55JU Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 225MHz ~ 400MHz Gain: 7.2dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JU Supplier Device Package: 55JU	In Stock371 More on Order
UMIL25 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 33V 400MHZ 55HV Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 225MHz ~ 400MHz Gain: 8.9db ~ 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	In Stock408 More on Order
UMIL3 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ 55FT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 225MHz ~ 400MHz Gain: 11.8db ~ 13dB Power - Max: 11W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V Current - Collector (Ic) (Max): 700mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	In Stock255 More on Order
UMIL3B Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 30V 400MHZ 55FT Manufacturer: Microsemi Corporation Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 225MHz ~ 400MHz Gain: 13dB Power - Max: 11W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V Current - Collector (Ic) (Max): 700mA Operating Temperature: 150°C Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	In Stock256 More on Order
UMIL80 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 31V 500MHZ 55HV Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 200MHz ~ 500MHz Gain: 9dB ~ 9.5dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	In Stock156 More on Order
UPA800T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 8GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock358 More on Order
UPA800T-T1 CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 8GHZ 6SO Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	In Stock139 More on Order
UPA800T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 8GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock276 More on Order
UPA801T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 4.5GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock239 More on Order
UPA801T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 4.5GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock339 More on Order
UPA802T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 7GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock109 More on Order
UPA802T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 7GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock323 More on Order
UPA806T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 6V 12GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock386 More on Order
UPA806T-T1 CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 6V 12GHZ 6SO Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	In Stock269 More on Order
UPA806T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 6V 12GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock420 More on Order
UPA810T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 4.5GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock156 More on Order
UPA810T-T1 CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 4.5GHZ 6SO Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.5dB @ 1GHz Gain: 7dB ~ 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	In Stock387 More on Order
UPA810T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 4.5GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock264 More on Order
UPA811T-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 8GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock188 More on Order
UPA811T-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 10V 8GHZ SOT363 Manufacturer: CEL Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock190 More on Order

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