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Transistors

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UPA812T-A
UPA812T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 7GHZ SOT363

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock167

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UPA812T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 7GHZ SOT363

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock362

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UPA814T-A
UPA814T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 9GHZ 6SO

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock353

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UPA814T-T1

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 9GHZ 6SO

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock332

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UPA814T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 9GHZ 6SO

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock107

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UPA895TS-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 5.5V 6.5GHZ 6SMINI

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-Super Lead-Less MiniMold
In Stock400

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UPA895TS-T3-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 5.5V 6.5GHZ 6SMINI

  • Manufacturer: CEL
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-Super Lead-Less MiniMold
In Stock161

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UTV005
UTV005

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 860MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 11dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock104

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UTV010
UTV010

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 860MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 11.5dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock425

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UTV020
UTV020

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 860MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 12dB
  • Power - Max: 17W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock354

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UTV040
UTV040

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 860MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 9dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock264

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UTV080
UTV080

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 28V 860MHZ 55JV

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 28V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 9dB ~ 10dB
  • Power - Max: 65W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Channel, DIN Rail Mount
  • Package / Case: 55JV
  • Supplier Device Package: 55JV
In Stock266

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UTV200
UTV200

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 28V 860MHZ 55JV

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 28V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JV
  • Supplier Device Package: 55JV
In Stock486

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UTV8100B
UTV8100B

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 60V 860MHZ 55RT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55RT
  • Supplier Device Package: 55RT
In Stock256

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ZTX325
ZTX325

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ E-LINE

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
In Stock139

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ZTX325STOA
ZTX325STOA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ E-LINE

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
In Stock279

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ZTX325STOB
ZTX325STOB

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ E-LINE

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
In Stock243

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ZTX325STZ
ZTX325STZ

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ E-LINE

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
In Stock304

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ZUMT918TA
ZUMT918TA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT323

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
In Stock349

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ZUMTS17HTA
ZUMTS17HTA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT323

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
In Stock408

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ZUMTS17HTC
ZUMTS17HTC

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT323

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
In Stock477

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ZUMTS17NTA
ZUMTS17NTA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 11V 3.2GHZ SOT323

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Frequency - Transition: 3.2GHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
In Stock129

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1085-MMBT100A
1085-MMBT100A

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN SOT-23

  • Manufacturer: ON Semiconductor
  • Series: *
In Stock271

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12A02CH-TL-E
12A02CH-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 12V 1A CPH3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 20mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 700mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
In Stock4,697

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12A02MH-TL-E
12A02MH-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 12V 1A MCPH3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 20mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-MCPH
In Stock8,698

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15C01C-TB-E
15C01C-TB-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.7A CP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 330MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
In Stock111

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15C01M-TL-E
15C01M-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.7A MCP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 330MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
In Stock13,796

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15C01SS-TL-E
15C01SS-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.6A SSFP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 330MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SSFP
In Stock245

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15C02CH-TL-E
15C02CH-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 1A CPH3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 20mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
  • Power - Max: 700mW
  • Frequency - Transition: 440MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
In Stock9,735

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15C02MH-TL-E
15C02MH-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 1A MCPH3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 20mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 440MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-MCPH
In Stock162

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