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Transistors

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2N5088TA
2N5088TA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock159

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2N5088TAR
2N5088TAR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock484

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2N5088TF
2N5088TF

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock222

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2N5088TFR
2N5088TFR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock306

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2N5089
2N5089

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.05A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock319

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2N5089
2N5089

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.05A TO-92

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock3,790

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2N5089BU
2N5089BU

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock242

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2N5089G
2N5089G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.05A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock221

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2N5089_J18Z
2N5089_J18Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock349

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2N5089RLRA
2N5089RLRA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.05A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock497

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2N5089RLRAG
2N5089RLRAG

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.05A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock147

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2N5089TA
2N5089TA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock491

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2N5089TAR
2N5089TAR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock113

More on Order

2N5089TF
2N5089TF

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock282

More on Order

2N5089TFR
2N5089TFR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 25V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock381

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2N5091
2N5091

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock268

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2N5092
2N5092

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock126

More on Order

2N5093
2N5093

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock277

More on Order

2N5095
2N5095

Microsemi

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-5

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Power - Max: 4W
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock402

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2N5097
2N5097

Microsemi

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-5

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Power - Max: 4W
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock427

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2N5099
2N5099

Microsemi

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-5

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Power - Max: 4W
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock259

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2N5134
2N5134

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-106

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
  • Frequency - Transition: 250MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-106-3 Domed
  • Supplier Device Package: TO-106
In Stock263

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2N5139
2N5139

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-106

  • Manufacturer: Central Semiconductor Corp
In Stock486

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2N5143
2N5143

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANSISTOR NPN TO-106

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 1V
  • Frequency - Transition: 100MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-222AA, TO-105-3 Domed
  • Supplier Device Package: TO-105
In Stock205

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2N5151
2N5151

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock451

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2N5151L
2N5151L

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock459

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2N5152
2N5152

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock212

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2N5152L
2N5152L

Microsemi

Transistors - Bipolar (BJT) - Single

NPN SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock252

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2N5154
2N5154

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock334

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2N5154L
2N5154L

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER SILICON TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock298

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